Photoluminescence of low-energy ion bombarded silicon

Davis, R. J.; Habermeier, H.-U.; Weber, J.
December 1985
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1295
Academic Journal
Using photoluminescence we have examined defects introduced into silicon by low-energy inert gas ion bombardment (ion beam etching or ion beam milling, with Ne[sup +], Ar[sup +], Kr[sup +], and Xe[sup +]) in the 200-2000 eV ion energy range. The spectra indicate the presence of noble gas associated centers which appear to be identical to the defect which is responsible for the well-known I[sub 1] spectrum (or W), except for modifications due to the interaction with the noble gas atoms. The appearance of the modified I[sub l] spectra at these low bombardment energies suggests a simple structure of the underlying defects.


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