TITLE

Photoluminescence of low-energy ion bombarded silicon

AUTHOR(S)
Davis, R. J.; Habermeier, H.-U.; Weber, J.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1295
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using photoluminescence we have examined defects introduced into silicon by low-energy inert gas ion bombardment (ion beam etching or ion beam milling, with Ne[sup +], Ar[sup +], Kr[sup +], and Xe[sup +]) in the 200-2000 eV ion energy range. The spectra indicate the presence of noble gas associated centers which appear to be identical to the defect which is responsible for the well-known I[sub 1] spectrum (or W), except for modifications due to the interaction with the noble gas atoms. The appearance of the modified I[sub l] spectra at these low bombardment energies suggests a simple structure of the underlying defects.
ACCESSION #
9818699

 

Related Articles

  • Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition. Jae Kwon Kim; Kyu Man Cha; Jung Hyun Kang; Yong Kim; Jae-Yel Yi; Tae Hun Chung; Hong Jun Bark // Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1595 

    We investigate the effect of Ar-ion-beam irradiation during the deposition of SiOx films by dual-ion-beam deposition system. Ion-beam irradiation effectively increases the oxygen content, x, in SiOx films indicative of the preferential sputtering of Si phase as compared to SiO2 phase in SiOx...

  • Ultrafast photoluminescence from freestanding Si nanocrystals. Kim, Sung; Shin, Dong Hee; Choi, Suk-Ho // Applied Physics Letters;6/18/2012, Vol. 100 Issue 25, p253103 

    SiO1.2/SiO2 multilayers were grown on n-type (100) Si wafers by ion beam sputtering and subsequently annealed at 1100 °C to form SiO2-embedded Si (S-Si) nanocrystals (NCs). The SiO2 matrix was then removed from S-Si NCs by chemical treatments to prepare freestanding Si (F-Si) NCs. The...

  • Highly Charged Ion Bombardment of Silicon Surfaces. Sanabia, Jason E.; Goldie, Scott N.; Ratliff, Laura P.; Goldner, Lori S.; Gillaspy, John D. // AIP Conference Proceedings;2003, Vol. 680 Issue 1, p568 

    Visible photoluminescence from Si(100) surfaces irradiated by highly charged ions has recently been reported [1]. In an attempt to reproduce these results, highly charged ion-irradiated silicon samples were prepared at the Electron Beam Ion Trap at the National Institute of Standards and...

  • Soft X-ray fluorescence and photoluminescence of Si nanocrystals embedded in SiO[sub 2]. Chang, G.S.; Son, J.H.; Chae, K.H.; Whang, C.N.; Kurmaev, E.Z.; Shamin, S.N.; Galakhov, V.R.; Moewes, A.; Ederer, D.L. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 3, p303 

    Abstract. We have used ion-beam mixing to form Si nanocrystals in SiO[sub 2] and SiO[sub 2]/Si multilayers, and applied photoluminescence and soft-X-ray emission spectroscopy to study the nanoparticles. Ion-beam mixing followed by heat treatment at 1100 Celsius for 2 h forms the Si nanocrystals....

  • Optical properties of erbium-implanted porous silicon microcavities. Reece, P.J.; Gal, M.; Tan, H.H.; Jagadish, C. // Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3363 

    We have used ion implantation for erbium doping of mesoporous silicon microcavities. Optically active erbium-doped microcavities with Q factors in excess of 1500 have been demonstrated. We observed strong modification of the emission properties of the erbium in the microcavity with an...

  • Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by... Chao, L. C.; Steckl, A. J. // Applied Physics Letters;4/19/1999, Vol. 74 Issue 16, p2364 

    Investigates room-temperature visible and infrared photoluminescence (PL) from Pr-implanted GaN films by focused-ion-beam direct wire. Observation of a strong room-temperature emission after annealing; Obtaining of essentially identical PL spectra.

  • Violet/blue emission from hydrogenated amorphous carbon films deposited from energetic CH[sub 3][sup +] ions and ion bombardment. Liao, Meiyong; Feng, Zhihong; Chai, Chunlin; Yang, Shaoyan; Liu, Zhikai; Wang, Zhanguo // Journal of Applied Physics;2/15/2002, Vol. 91 Issue 4, p1891 

    Considering the complexity of the general plasma techniques, pure single CH[sub 3][sup +] ion beams were selected for the deposition of hydrogenated amorphous (a) carbon films with various ion energies and temperatures. Photoluminescence (PL) measurements have been performed on the films and...

  • The Effect of Irradiation with Fast Argon Ions on the Characteristics of Planar Silicon Heterostructures. Karatetskiı, S. S.; Korovin, O. P.; Sokolov, V. I. // Technical Physics Letters;Jan2002, Vol. 28 Issue 1, p13 

    Irradiation of a silicon-based planar heterostructure with 40-MeV argon ions leads to a decrease in the MOS structure capacitance and in the p-n junction photosensitivity range. The effects are explained by special features of the damage produced by fast ions in the crystal target.

  • Ion-beam mixing in Fe/Si bilayers by singly and highly charged ions: evolution of phases, spike mechanism and possible effects of the ion-charge state. Dhar, S.; Schaaf, P.; Bibic, N.; Hooker, E.; Milosavljevic, M.; Lieb, K.P. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 5, p773 

    Silicide formation and ion beam mixing of Fe/Si bilayers due to Ar-, Xe- and Au-ion irradiations at room and liquid-nitrogen temperatures were investigated. For the study of silicide phase formation, the Fe/Si bilayers were irradiated with 100-keV Ar[SUP+], 250-keV Xe[SUP+], 700-keV Xe[SUP2+] or...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics