Direct variation of metal-GaAs Schottky barrier height by the influence of interface S, Se, and Te

Waldrop, J. R.
December 1985
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1301
Academic Journal
The electrical properties and interface chemistry of Schottky barrier contacts (Ag, Al, Au, Mn, Pr, and Ti) formed on n-type GaAs 〈100〉 surfaces that had prior exposure to elemental S, Se, and Te are compared to those of ideal (metal deposited onto a clean surface) contacts. The interface Fermi energy E[sup i, sub F] and interface chemistry during contact formation were investigated by x-ray photoemission spectroscopy; the accompanying Schottky barrier height φ[sub B] was measured by current-voltage and capacitance-voltage techniques. A substantial decrease in φ[sub B] land correlated change in E[sup i, sub F]) for A1 and Mn contacts is associated with a contact metal-chalcogen chemical reaction at the Schottky barrier interface, while some nonreactive noble metal-chalcogen interfaces have a φ[sub B] increase. By choice of contact metal and interface chalcogen a φ[sub B] range of > 0.6 eV is obtained (∼0.35 to 1.0 eV, which is > 40% of the GaAs band gap) via corresponding changes in E[sup i, sub F].


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