Electrical property improvements in In-doped dislocation-free GaAs by bulk annealing

Osaka, Jiro; Hyuga, Fumiaki; Watanabe, Kazuo
December 1985
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1307
Academic Journal
The effects of bulk annealing on the electrical properties of an In-doped dislocation-free semiinsulating GaAs are investigated. The crystal is grown by a fully encapsulated Czochralski method using the vertical magnetic field. It was found that the EL2 concentration increases after isochronal bulk annealing for 5 h from 800 to 1100 °C. In addition, the activation efficiency of implanted Si was found to correlate to the annealing behavior of the defect.


Related Articles

  • Transition metal implants in In0.53Ga0.47As. Gulwadi, Sadanand M.; Rao, Mulpuri V.; Berry, Alok K.; Simons, David S.; Chi, Peter H.; Dietrich, Harry B. // Journal of Applied Physics;4/15/1991, Vol. 69 Issue 8, p4222 

    Focuses on a study which dealt with the implantation of single- and multiple-energy iron, chromium and vanadium ions in gallium arsenide (GaAs). Results of the GaAs annealing; Analysis on the lattice quality of implanted indium gallium arsenide; Calculation equations.

  • Characterization of annealed heavily C-doped p+-AlGaAs. Watanabe, Kazuo; Yamazaki, Hajime // Journal of Applied Physics;11/1/1993, Vol. 74 Issue 9, p5587 

    Deals with a study which analyzed the sources of degradation of majority- and minority-carrier characteristics in annealed and as-grown carbon-doped aluminum gallium arsenide epilayers. Utilization of metalorganic chemical vapor deposition; Characteristics of the minority carrier; Clarification...

  • Integration of low-temperature GaAs on Si substrates. Frankel, Michael Y.; Tadayon, Bijan; Carruthers, Thomas F. // Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p255 

    Demonstrates the feasibility of gallium arsenide (GaAs) material integration with silicon (Si) substrates by molecular beam epitaxy (MBE). Integration of GaAs into Si circuits; Influence of the MBE growth temperature on the photogenerated carrier lifetime in GaAs; Importance of the postgrowth...

  • Effect of annealing on the electrical and optical properties of GaAs/InGaP/n...InGaAs epitaxial... Watanabe, Kazuo; Hyuga, Fumiaki // Journal of Applied Physics;11/15/1998, Vol. 84 Issue 10, p5614 

    Presents experimental results on the effect of annealing on the electrical and optical properties of gallium arsenide (GaAs)/indium GaAs/GaAs epitaxial layers. Methodology of the experiment; Discussion on the mechanism of the effect; Conclusions.

  • Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers. Li, Wei; Turpeinen, Jani; Melanen, Petri; Savolainen, Pekka; Uusimaa, Petteri; Pessa, Markus // Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p91 

    Strain-compensated GaInNAs/GaAsP quantum well structures and lasers were grown by gas-source molecular beam epitaxy using a rf-plasma nitrogen radical beam source. Effects of rapid thermal annealing on the optical properties of GaInNAs/GaAsP quantum well structures as well as laser diodes were...

  • Response to 'Comment on 'Mechanism responsible for the semi-insulating properties of.... Liu, X.; Prasad, A. // Applied Physics Letters;8/28/1995, Vol. 67 Issue 9, p1333 

    Responds to comments on the mechanism responsible for the semi-insulating properties of low-temperature grown gallium arsenide (LTG-GaAs) by molecular beam epitaxy. Implication of arsenic defect high concentration on annealed LTG-GaAs; Clarification of the data analysis from near-infrared...

  • Effects of high-temperature annealing on the optical phonons and nitrogen local vibrational modes in GaAs1-xNx epilayers. Coaquira, J. A. H.; Teixeira, J. F.; da Silva, S. W.; Morais, P. C.; Fotkatzikis, A.; Freundlich, A. // Applied Physics Letters;12/22/2008, Vol. 93 Issue 25, p252105 

    Effects of high-temperature annealing on the vibrational properties of strained GaAs1-xNx/GaAs epilayers with x<=0.037 have been studied by room-temperature backscattering Raman measurements. The reduction in the linear redshift of the LO1 line after the annealing, commonly related to strain...

  • Annealing of dilute-nitride GaAsSbN/InP strained multiple quantum wells. Xu, D. P.; Huang, J. Y. T.; Park, J.; Mawst, L. J.; Kuech, T. F.; Song, X.; Babcock, S. E. // Applied Physics Letters;11/5/2007, Vol. 91 Issue 19, p191909 

    The thermal annealing of GaAsSbN/InP strained multiple quantum wells (MQWs) grown by metal organic chemical vapor deposition was investigated. Photoluminescence peak intensity and linewidth changes indicate a significant improvement in optical quality of the GaAsSbN/InP MQWs upon annealing. We...

  • Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer. Dikareva, N.; Vikhrova, O.; Zvonkov, B.; Malekhonova, N.; Nekorkin, S.; Pirogov, A.; Pavlov, D. // Semiconductors;Jan2015, Vol. 49 Issue 1, p9 

    Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500-570°C. The structural quality of the samples and the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics