TITLE

Electrical property improvements in In-doped dislocation-free GaAs by bulk annealing

AUTHOR(S)
Osaka, Jiro; Hyuga, Fumiaki; Watanabe, Kazuo
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1307
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of bulk annealing on the electrical properties of an In-doped dislocation-free semiinsulating GaAs are investigated. The crystal is grown by a fully encapsulated Czochralski method using the vertical magnetic field. It was found that the EL2 concentration increases after isochronal bulk annealing for 5 h from 800 to 1100 °C. In addition, the activation efficiency of implanted Si was found to correlate to the annealing behavior of the defect.
ACCESSION #
9818693

 

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