TITLE

A 19% efficient AlGaAs solar cell with graded band gap

AUTHOR(S)
Virshup, G. F.; Ford, C. W.; Werthen, J. G.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1319
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An Al[sub 0.20] Ga[sub 0.80] As solar celt with a band gap graded from 1.64 eV at the junction to 1.72 eV at the surface has been fabricated using metalorganic chemical vapor deposition. An efficiency of 19.2% has been measured under 1-sun, AM2 simulated conditions with an open circuit voltage of 1.18 V, a short circuit density of 14.5 mA/cm², and a fill factor of 0.83.
ACCESSION #
9818684

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics