Measurement of the band gap of GexSi1-x/Si strained-layer heterostructures

Lang, D. V.; People, R.; Bean, J. C.; Sergent, A. M.
December 1985
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1333
Academic Journal
We have used photocurrent spectroscopy to measure the optical absorption spectra of coherently strained layers of Ge[sub x]Si[sub 1 - x] grown on 〈001〉 Si by molecular beam epitaxy. A dramatic lowering of the indirect band gap, relative to that of unstrained bulk Ge-Si alloys, is observed. Our results for 0≤x≤0.7 are in remarkably good agreement with recent calculations of the effects of misfit strain on the band edges of coherently strained Ge-Si heterostructures. At x = 0.6, the gap is lower than that of pure Ge.


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