TITLE

Nitrogen-related deep electron traps in float zone silicon

AUTHOR(S)
Nauka, K.; Goorsky, M. S.; Gatos, H. C.; Lagowski, J.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1341
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Two deep levels (electron traps) associated with nitrogen were identified in high resistivity float zone silicon employing deep level transient spectroscopy. The levels are formed during annealing at high temperatures (≥900 °C). They exhibit activation energies of E[sub c] - 0.58 eV and E[sub c] - 0.5 eV. The electron capture cross section for the 0.58 eV level is about 5 × 10[sup -14] cm². The levels appear to be associated with complexes rather than isolated nitrogen atoms.
ACCESSION #
9818669

 

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