TITLE

Degradation-free modulation-doped field-effect transistors grown by organometallic chemical vapor deposition

AUTHOR(S)
Bhat, R.; Chan, W. K.; Kastalsky, A.; Koza, M. A.; Davisson, P. S.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1344
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using AlGaAs and GaAs grown by organometallic chemical vapor deposition (OMCVD), we have fabricated high-transconductance modulation-doped field-effect transistors which do not exhibit the severe electrical degradation in the dark at 77 K that is ordinarily observed in such devices. Such degradation has been attributed to defects in the n[sup +]-AlGaAs. Experiments on ohmic test devices using different OMCVD grown structures suggest that the improvement is due to a drastically reduced process of charge polarization in the n[sup +]-AlGaAs layer.
ACCESSION #
9818666

 

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