Raman, transmission electron microscopy, and conductivity measurements in molecular beam deposited microcrystalline Si and Ge: A comparative study

Gonzalez-Hernandez, J.; Azarbayejani, G. H.; Tsu, R.; Pollak, F. H.
December 1985
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1350
Academic Journal
The structure of molecular beam deposited microcrystalline silicon and germanium films prepared under different growth conditions has been analyzed by conventional transmission electron microscope (TEM) and Raman scattering (RS) and compared to electrical conductivity experiments. The TEM measurements yield an average grain size Lo ranging from 200 Å to 1.5 µm. On the other hand, the line shape of the RS is determined by a mean free path related to the average separation l between defects (or impurities), where l ≤ 150 Å. We find in a number of cases that the electrical conductivity is determined by l rather than L[sub 0]. This experiment demonstrates the significance of RS as a structural characterization method when used in conjunction with other techniques such as TEM.


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