Fabrication of submicron deep ultraviolet masks by ion microprojection

Stangl, G.; Rüdenauer, F. G.; Stengl, G.; Löschner, H.; Maurer, W.; Wolf, P.
December 1985
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1358
Academic Journal
Photolithographic masks with submicron resolution have been produced in a one-step process by 1:10 ion microprojection of a stencil mask pattern into polymethyl methacrylate resist material. In the implanted pattern areas, light transmission is reduced for wavelengths extending into deep ultraviolet (DUV); thus, these patterns can be replicated into UV-sensitive photoresists using, e.g., excimer laser radiation. In the present ion projection lithography machine a 2.5-mm-diam mask was produced using a single 2-s exposure with 82 kev He[sup +] ions. Replication in poly(butene-l- sulfone) resist was performed by single or double shot exposure using a KrF excimer laser (wavelength 248 nm). Resolutions exceeding 800 lp/mm were obtained in the replicated structures.


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