TITLE

Low threshold planar buried heterostructure lasers fabricated by impurity-induced disordering

AUTHOR(S)
Thornton, R. L.; Burnham, R. D.; Paoli, T. L.; Holonyak, N.; Deppe, D. G.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1239
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the fabrication of index-guided buried heterostructure lasers by the process of silicon impurity-induced disordering. This fabrication process for a buried heterostructure laser offers the advantage of reduced fabrication complexity over previous fabrication methods. We present measurements that demonstrate the operation of these devices in a single longitudinal mode, fundamental transverse mode, and with cw threshold currents as low as 3 mA. We also have extracted 80 mW cw from a device with a 10-mA threshold current. Our results indicate that this process has great potential for the fabrication of low threshold, efficient light sources.
ACCESSION #
9818653

 

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