TITLE

Infrared absorption band for substitutional nitrogen in silicon

AUTHOR(S)
Stein, H. J.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1339
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Formation and annealing characteristics for an infrared absorption band at 653 cm[sup -1] in [sup 14]Nimplanted Si have been correlated with those for a distorted substitutional N center identified previously in electron paramagnetic resonance studies. It is concluded from this correlation and the observed frequency shift upon isotopic substitution of [sup 15]N that the 653 cm[sup -1] band is a localized vibrational mode for substitutional [sup 14]N in Si.
ACCESSION #
9818632

 

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