Thin SiO2 insulators grown by rapid thermal oxidation of silicon

Moslehi, Mehrdad M.; Shatas, Steven C.; Saraswat, Krishna C.
December 1985
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1353
Academic Journal
Rapid thermal oxidation of 〈100〉 silicon in dry oxygen ambient has been performed in a lampheated rapid thermal processing system. For the first time we report fairly extensive experimental results on the initial regime of thermal oxidation of silicon by the rapid thermal oxidation technique. The results clearly indicate the nonlinear behavior of the rapid thermal oxidation growth kinetics in the short time regime, in contrast to some recent rapid thermal oxidation data in the literature which suggested linear growth kinetics. The kinetics data show an increasing growth rate as the rapid thermal oxidation time is reduced, the highest oxidation rate being for the shortest oxidation time. It is also revealed that simple extrapolation of the existing long time thin oxide growth models to the short time rapid thermal oxidation regime does not give a sufficiently precise prediction of the kinetics in the short time regime where other transient physical processes besides simple one-species oxidant diffusion and interface reaction may play an important role.


Related Articles

  • Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation. Di, Zengfeng; Chu, Paul K.; Zhang, Miao; Liu, Weili; Song, Zhitang; Lin, Chenglu // Journal of Applied Physics;3/15/2005, Vol. 97 Issue 6, p064504 

    The movement of Ge during Ge condensation in SiGe-on-insulator (SGOI) fabrication is studied based on the competition between the diffusion of Ge atoms and accumulation of Ge atoms. The diffusion of Ge atoms overwhelms the Ge accumulation at the top thermal oxide/SiGe interface, resulting in a...

  • A pile-up phenomenon during arsenic diffusion in silicon-on-insulator structures formed by oxygen implantation. Normand, P.; Tsoukalas, D.; Guillemot, N.; Chenevier, P. // Journal of Applied Physics;10/15/1989, Vol. 66 Issue 8, p3585 

    Presents a study which assessed arsenic diffusion in silicon-on-insulator formed by deep oxygen implantation. Details on the experiment; Results of the study; Conclusion.

  • Review of RF patents for refractory inventions.  // Refractories & Industrial Ceramics;Mar2011, Vol. 51 Issue 6, p460 

    No abstract available.

  • Heat-insulating Materials Obtaining from Dispersive Screenings of Construction Sand. Kazmina, Olga; Dushkina, Maria; Volland, Svetlana; Lebedeva, Elena // Advanced Materials Research;2014, Issue 1040, p314 

    It is established that the eliminations of construction sand with the content of SiO2 about 70 wt. % and particle size less than 60 mk are suitable for the production of a foamglass-crystal material on the basis of the low-temperature frit, which was synthesized at the temperature 900 °C. The...

  • Study on SiO2 Aerogels/Inorganic Fiber Insulation Packaging Composite Material. Hong Zhao; Yingjie Qiao; Honghou Mao // Information Technology Journal;2013, Vol. 12 Issue 18, p4285 

    This article analyze the characteristics of prepared aerogel insulation composites material, then thermal performance of composite aerogels, aerogel insulation the performance of composite materials by SEM and other test, it has a certain significance about thermal insulation composite aerogels...

  • Oxide materials: Superconductivity on the other side. Gariglio, Stefano; Gabay, Marc; Triscone, Jean-Marc // Nature Nanotechnology;Jan2010, Vol. 5 Issue 1, p13 

    This article discusses research on the occurrence of superconductivity on the insulating side of a bilayer structure made of a metallic oxide and an insulating oxide. It references a study by Gennady Logvenov, Adrian Gozar and Ivan Bozovic of Brookhaven National Laboratory in New York published...

  • Optoelectronic Materials, In a Flash. Wood, Andrew // Chemical Week;10/9/2002, Vol. 164 Issue 40, p24 

    Reports the development of a way to convert calcium aluminum oxide from an insulator into an electrical conductor using ultraviolet light by scientists from the Japan Science and Technology Corp. and the Tokyo Institute of Technology in October 2002. Materials for optoelectronic applications;...

  • Versatile method to fabricate silicone rubber sponge. Klingberg, Detlef; Griffin, Brian; Herzlich, Harold // Rubber & Plastics News;4/18/2005, Vol. 34 Issue 19, p16 

    The article informs that silicone rubber sponge has been used extensively in various industrial applications for many decades. 1-3 Cellular silicone products are utilized whenever the beneficial property profile of silicone elastomers needs to be combined with the advantages of a sponge-like...

  • Study of subboundary generation in silicon-on-insulator films recrystallized by a pseudoline electron beam. Horita, Susumu; Fukao, Kazuichi; Ishiwara, Hiroshi // Journal of Applied Physics;9/15/1990, Vol. 68 Issue 6, p2769 

    Investigates subboundary generation in silicon-on-insulator (SOI) structures which have square-shaped SOI regions and surrounding seed stripes. Consideration on subboundary generation and temperature profile; Equation for the linear surface temperature; Profile for the synthetic scan case.

  • Electron beam charging of insulators with surface layer and leakage currents. Cornet, N.; Goeuriot, D.; Guerret-Piécourt, C.; Juvé, D.; Tréheux, D.; Touzin, M.; Fitting, H.-J. // Journal of Applied Physics;Mar2008, Vol. 103 Issue 6, p064110 

    The electron beam induced self-consistent charge transport in layered insulators (here, bulk alumina covered by a thin silica layer) is described by means of an electron-hole flight-drift model and an iterative computer simulation. Ballistic secondary electrons and holes, their attenuation and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics