Optically pumped laser oscillation at 3.82 μm from InAs1-xSbx grown by molecular beam epitaxy on GaSb

van der Ziel, J. P.; Chiu, T. H.; Tsang, W. T.
December 1985
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1139
Academic Journal
Molecular beam epitaxy has been used to grow InAs1-xSbx active layers on GaSb substrates. Lattice matches of better than 10-3 were obtained with x[bar_over_tilde:_approx._equal_to]0.09. Index waveguiding of the relatively low refractive index InAs1-xSbx is obtained by using an adjacent GaSb guiding layer and a lower refractive index Al0.5Ga0.5Sb cladding layer. Optically pumped laser emission at 3.82 μm has been observed from 77 to 135 K with a T0=15.9 K.


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