TITLE

Optically pumped laser oscillation at 3.82 μm from InAs1-xSbx grown by molecular beam epitaxy on GaSb

AUTHOR(S)
van der Ziel, J. P.; Chiu, T. H.; Tsang, W. T.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1139
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Molecular beam epitaxy has been used to grow InAs1-xSbx active layers on GaSb substrates. Lattice matches of better than 10-3 were obtained with x[bar_over_tilde:_approx._equal_to]0.09. Index waveguiding of the relatively low refractive index InAs1-xSbx is obtained by using an adjacent GaSb guiding layer and a lower refractive index Al0.5Ga0.5Sb cladding layer. Optically pumped laser emission at 3.82 μm has been observed from 77 to 135 K with a T0=15.9 K.
ACCESSION #
9818623

 

Related Articles

  • Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence. Hai-Ming Ji; Baolai Liang; Simmonds, Paul J.; Bor-Chau Juang; Tao Yang; Young, Robert J.; Huffaker, Diana L. // Applied Physics Letters;3/9/2015, Vol. 106 Issue 10, p1 

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that...

  • Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes. Banerjee, Koushik; Ghosh, Siddhartha; Mallick, Shubhrangshu; Plis, Elena; Krishna, Sanjay // Journal of Electronic Materials;Sep2009, Vol. 38 Issue 9, p1944 

    Silicon dioxide (SiO2), silicon nitride (Si xN y), and zinc sulfide (ZnS) with ammonium sulfide [(NH4)2S] as a prepassivation surface treatment were compared as passivants for InAs/GaSb strained layer superlattice detectors with a 0% cutoff wavelength of ∼10 μm. SiO2 did not show...

  • Formation of self-assembled quantum dots on AlInAs and GaInAs matrices using a GaSb sublayer. Enzmann, Roland; Dachs, Susanne; Meyer, Ralf; Finley, Jonathan; Amann, Markus-Christian // Applied Physics Letters;8/20/2007, Vol. 91 Issue 8, p083111 

    In this letter, the authors present the formation of InAs quantum dots on GaInAs and AlInAs lattice matched on InP (001) substrates via molecular beam epitaxy by inserting a two monolayer GaSb sublayer below the InAs quantum dot material. They show that the formation of quantum dots is favored...

  • InAs/GaSb cascaded active region superlattice light emitting diodes for operation at 3.8 μm. Koerperick, E. J.; Olesberg, J. T.; Boggess, T. F.; Hicks, J. L.; Wassink, L. S.; Murray, L. M.; Prineas, J. P. // Applied Physics Letters;3/24/2008, Vol. 92 Issue 12, p121106 

    We report on the growth and characterization of InAs/GaSb superlattice light emitting diodes (LEDs) operating in the midwave infrared at 3.8 μm at 77 K. Devices were grown by solid source molecular beam epitaxy on (100) GaSb substrates and were fabricated into 120×120 μm2 mesa devices...

  • Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study. Kim, Honggyu; Meng, Yifei; Rouviére, Jean-Luc; Isheim, Dieter; Seidman, David N.; Zuo, Jian-Min // Journal of Applied Physics;Mar2013, Vol. 113 Issue 10, p103511 

    We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast...

  • Molecular beam epitaxial growth and optical properties of InAs1-xSbx in 8–12 μm wavelength range. Yen, M. Y.; Levine, B. F.; Bethea, C. G.; Choi, K. K.; Cho, A. Y. // Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p927 

    We have successfully grown InAs1-xSbx by molecular beam epitaxy over the complete compositional range of 0

  • Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP. Hakkarainen, Teemu; Schramm, Andreas; Tukiainen, Antti; Ahorinta, Risto; Toikkanen, Lauri; Guina, Mircea // Nanoscale Research Letters;Dec2010, Vol. 5 Issue 12, p1892 

    We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron...

  • Surface reconstruction limited mechanism of molecular-beam epitaxial growth of AlGaAs on (111)B.... Hayakawa, Toshiro; Morishima, Mitsukata; Chen, Samuel // Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3321 

    Presents the surface reconstruction limited mechanism of molecular-beam epitaxial growth of Ga compounds on (111)B face. Distinction between the growth rate of gallium compounds by molecular-beam epitaxy and mesa-shaped substrates; Transmission electron microscopy images of Ga compounds;...

  • X-ray study of misfit strain relaxation in lattice-mismatched heterojunctions. Kamigaki, K.; Sakashita, H.; Kato, H.; Nakayama, M.; Sano, N.; Terauchi, H. // Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1071 

    High-resolution x-ray diffraction measurements have been carried out in AlxGa1-xAs and InxGa1-xAs grown by the molecular beam epitaxy method on (001) GaAs substrates. The thin epitaxial layers in these lattice-mismatched semiconductor single heterojunctions are uniformly distorted and there is...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics