TITLE

Rate of formation of silicon dioxide; semiconducting ruthenium silicide

AUTHOR(S)
d’Heurle, F. M.; Frampton, R. D.; Irene, E. A.; Jiang, Hao; Petersson, C. S.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1170
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The rate of oxide formation over Ru2Si3, a semiconductor with a band gap of about 1 eV, is about as slow as that for Ir3Si5, another semiconducting silicide, and comparable to the rate observed over silicon itself. This is in opposition to what one obtains over metallic silicides where the linear term of oxidation kinetics is at least an order of magnitude greater than that for silicon. Analysis of these contrasting results leads to the conclusion that the enhanced rate over metallic silicides is due to the greater density of states at the Fermi level which facilitates charge transfer between the oxygen atoms and the oxidizing material. The possibility that the rate of oxidation should depend strongly on the metallic or covalent character of the Si bonding appears to be excluded by the fast oxidation rate observed over NiSi2 and CoSi2.
ACCESSION #
9818600

 

Related Articles

  • Effect of fluorine in chemical-vapor-deposited tungsten silicide film on electrical breakdown of SiO2 film. Shioya, Yoshimi; Kawamura, Seiichiro; Kobayashi, Ikuro; Maeda, Mamoru; Yanagida, Kimio // Journal of Applied Physics;6/1/1987, Vol. 61 Issue 11, p5102 

    Presents information on a study which investigated the effect of fluorine in chemical-vapor-deposited tungsten silicide film on electrical breakdown of silicon dioxide. Methodology of the study; Results and discussion.

  • Thermoelectric efficiency of single crystal semiconducting ruthenium silicide. Krivosheev, A.E.; Ivanenko, L.I; Filonov, A.B.; Shaposhnikov, V.L.; Behr, G.; Schumann, J.; Borisenko, V.E. // Semiconductors;Jan2006, Vol. 40 Issue 1, p27 

    Thermoelectric efficiency of semiconducting ruthenium silicide Ru2Si3 has been systematically studied both experimentally and theoretically. Pure and Mn-doped Ru2Si3 single crystals were grown by zone melting with optical heating. Temperature dependences of the resistivity, Hall factor, Seebeck...

  • Formation and structure of epitaxial ruthenium silicides on (111)Si. Chang, Y. S.; Chou, M. L. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2411 

    Presents a study that analyzed the formation and structure of epitaxial ruthenium silicides on silicon. Methodology; Analysis of the electron diffraction pattern of the ruthenium silicides; Examination of the orientation relationships of the ruthenium silicides.

  • The measurement of effective complex refractive indices for selected metal silicides. Frampton, R. D.; Irene, E. A.; d’Heurle, F. M. // Journal of Applied Physics;2/1/1986, Vol. 59 Issue 3, p978 

    Presents a study that investigated the measurement of thermally grown silicon dioxide films on selected metal silicides via ellipsometry. Requirement in calculating the oxide-thickness; Comparison of the thicknesses of thermally grown silicon dioxide films from ellipsometry; Use of Rutherford...

  • Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection. II. Ti on SiO2. Krooshof, G. J. P.; Habraken, F. H. P. M.; van der Weg, W. F.; Van den hove, L.; Maex, K.; De Keersmaecker, R. F. // Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p5110 

    Provides information on a study which examined the rapid thermal processing of titanium thin films on silicon dioxide in argon and nitrogen[sub2]. Thermal nitridation and silicidation of titanium and silicon dioxide using elastic recoil; Processes in backscattering spectrometry and elastic coil...

  • Formation and high-temperature stability of CoSix films on an SiO2 substrate. Morgan, A. E.; Ritz, K. N.; Broadbent, E. K.; Bhansali, A. S. // Journal of Applied Physics;5/15/1990, Vol. 67 Issue 10, p6265 

    Examines the formation and high-temperature stability of cobalt silicide films on a silicon dioxide substrate. Details of the experimental procedures; Sheet resistance of the cobalt disilicide film; Effect of the presence of excess silicon in the silicide film.

  • Interaction of Co with Si and SiO2 during rapid thermal annealing. Chen, W. D.; Cui, Y. D.; Hsu, C. C.; Tao, J. // Journal of Applied Physics;6/1/1991, Vol. 69 Issue 11, p7612 

    Presents a study which investigated the interaction of cobalt with silicon and silicon dioxide during rapid thermal annealing. Discussion on phase sequence and layer morphology; Device used in recording the Auger electron spectra; Kinetics of the silicide formation.

  • Effect of a substrate on the phase transformations of amorphous TiSi2 thin films. Thompson, R. D.; Takai, H.; Psaras, P. A.; Tu, K. N. // Journal of Applied Physics;1/15/1987, Vol. 61 Issue 2, p540 

    Presents a study that examined the crystallization of an amorphous titanium silicide (TiSi[sub2]) evaporated thin film on poly-silicon and silicon dioxide (SiO[sub2]) substrates. Methodology; Analysis of the transmission electron micrographs of the deposited TiSi[sub2]/SiO[sub2] alloy;...

  • Formation and distribution of compounds at the Ru–Si(001) ultrathin film interface. Pasquali, L.; Mahne, N.; Montecchi, M.; Mattarello, V.; Nannarone, S. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    Interface formation between Ru and Si(001) has been studied by x-ray and ultraviolet photoemissions. The film properties were investigated, for metal deposition at room temperature, as a function of the Ru film thickness and as a function of the annealing temperature of a thick grown film. From...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics