TITLE

Study of high electrical field induced degradation of channel response in metal-oxide-semiconductor field-effect transistors using an ac conductance technique

AUTHOR(S)
Chow, P. D.; Wang, K. L.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1177
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
ac conductance (G) measurements in the frequency domain are used to monitor the degradation of the inversion layer response in metal-oxide-semiconductor field-effect transistors (MOSFET’s) due to high field stressing. The admittance of the conduction channel of the MOSFET’s is analyzed by use of a transmission line model. The time constant which governs the frequency response of the MOSFET inverted channel is extracted from the peak of the G/ω vs ω curve and is shown to be an important and sensitive parameter for studying the degradation of MOSFET interface properties after high field stressing. Measured data on 9 and 35 nm gate oxide MOSFET’s showed that the channel response degradation by high field stressing depends strongly on the gate oxide thickness.
ACCESSION #
9818596

 

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