TITLE

Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide

AUTHOR(S)
Harbison, J. P.; Hwang, D. M.; Levkoff, J.; Derkits, G. E.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1187
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have been able to fabricate structures which consist of a thin (∼10 nm) polycrystalline W film embedded in surrounding single crystalline GaAs by molecular beam epitaxy (MBE) using an electron beam evaporation source to deposit W metal in an ultrahigh vacuum MBE growth chamber. The entire deposition sequence can take place at elevated temperature (625–700 °C) due to the nonreactive nature of W with respect to GaAs. Reflective high-energy diffraction and transmission electron microscopy indicate that the single crystal GaAs overgrowth proceeds by seeding from the GaAs layer beneath the W through spontaneously occurring perforations in the W layer.
ACCESSION #
9818589

 

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