Diffusion of zinc into Ga1-xAlxAs

Ageno, S. K.; Roedel, R. J.; Mellen, N.; Escher, J. S.
December 1985
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1193
Academic Journal
A study of the diffusion of zinc into Ga1-xAlxAs with a ‘‘leaky tube’’ diffusion furnace has been carried out. The Ga1-xAlxAs epitaxial layers were grown with liquid phase epitaxy, and the aluminum concentration was varied from 0 to 44% in 4% increments; diffusions were performed in the temperature range 550–650 °C. It was found that the junction depth versus aluminum concentration was not a simple, monotonically increasing curve; rather, dramatic decreases in the apparent diffusion coefficient at xAl≊0.05 and xAl≊0.20 suggest that point defects, possibly including the DX center, are playing a significant role.


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