TITLE

Molecular beam epitaxial growth of Si on CoSi2 substrates

AUTHOR(S)
Ditchek, B. M.; Salerno, J. P.; Gormley, J. V.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1200
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin epitaxial films of Si have been grown on single crystal CoSi2 (111) substrates by molecular beam epitaxy. The CoSi2 was found to become atomically clean and suitable for growth upon heating to [bar_over_tilde:_approx._equal_to]750 °C in ultrahigh vacuum. Film uniformity and crystalline quality as judged by reflection electron diffraction are maximized by using growth temperatures as low as 400 °C.
ACCESSION #
9818579

 

Related Articles

  • Tunnel magnetoresistance for magnetic tunnel junctions with Co2FeAl0.5Si0.5 full Heusler electrodes fabricated by molecular beam epitaxy system. Tezuka, N.; Ikeda, N.; Mitsuhashi, F.; Sugimoto, S. // Journal of Applied Physics;Apr2009, Vol. 105 Issue 7, p07C925 

    The authors fabricated Co2FeAl0.5Si0.5 full Heusler alloy thin films by using a molecular beam epitaxy system on Cr buffered MgO single crystal substrates and investigated their structural and magnetic properties. It was revealed that Co2FeAl0.5Si0.5 films formed ordered L21 and B2 structures...

  • Crystallization of amorphous Co-Si alloys. Hong, Q. Z.; Barmak, K.; Clevenger, L. A. // Journal of Applied Physics;10/15/1992, Vol. 72 Issue 8, p3423 

    Presents a study which examined the crystallization of thin-film, amorphous cobalt-silicon alloys. Measurement of the heat release and volume contraction; Characteristics and correlation of changes in various physical properties during crystallization; Discussion of results.

  • High in-plane anisotropy of epitaxial CoPt(110) alloy films prepared by cosputtering or molecular beam epitaxy on MgO. Abes, M.; Ersen, O.; Meny, C.; Schmerber, G.; Acosta, M.; Arabski, J.; Ulhaq-Bouillet, C.; Dinia, A.; Panissod, P.; Pierron-Bohnes, V. // Journal of Applied Physics;3/15/2007, Vol. 101 Issue 6, p063911 

    We present structural and magnetic properties of three sets of structures: as-deposited CoPt films cosputtered at 900 K on MgO(110) substrates with a Pt(110) buffer layer and CoPt films deposited by molecular beam epitaxy directly on MgO(110) substrates at 900 K, as prepared and annealed at 900...

  • Si1-yCy surface alloys used as self-patterned templates for the growth of Ge dots. Simon, L.; Aubel, D.; Kubler, L. // Applied Physics Letters;11/13/2006, Vol. 89 Issue 20, p203104 

    The authors report on epitaxial growth and surface morphology of low C content Si1-yCy alloys deposited on Si(001) (molecular beam epitaxy method). In specific kinetic conditions these alloys grow by formation and propagation of step bunches (7–10 nm high). The authors demonstrate that...

  • Growth of Si...-xGe...(011) on Si(011) 16x2 by gas-source molecular beam epitaxy: Growth... Taylor, N.; Kim, H. // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p501 

    Presents a study which showed that gas-source molecular beam epitaxy (GS-MBE) provides several advantages over solid-source MBE for the growth of silicon and silicon-germanium alloys. Characteristics of three primary temperature regimes; Use of vacuum systems in testing; Symmetry of GS-MBE.

  • Molecular beam epitaxial growth of CoSi2 on porous Si. Kao, Y. C.; Wang, K. L.; Wu, B. J.; Lin, T. L.; Nieh, C. W.; Jamieson, D.; Bai, G. // Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1809 

    CoSi2 epitaxial layers with different thicknesses have been grown onto porous-Si substrates by molecular beam epitaxy. Good crystallinity is obtained for CoSi2 films thicker than 50 nm. The use of a thin buffer layer is found to be crucial in order to achieve abrupt interface and good...

  • Growth of p-type ZnSe:Li by molecular beam epitaxy. Cheng, H.; DePuydt, J. M.; Potts, J. E.; Smith, T. L. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p147 

    Molecular beam epitaxy has been used to grow Li-doped ZnSe on (100)GaAs substrates, resulting in material which exhibits a low-temperature photoluminescence spectrum dominated by emission from acceptor-bound excitons, with no evidence of emission from residual donors. Electrical measurements on...

  • Trends of deep level electron traps in AlxGa1-xAs grown by molecular beam epitaxy. Puechner, R. A.; Johnson, D. A.; Maracas, G. N. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1952 

    Deep level transient spectroscopy is used to study one of the deep electron traps commonly seen in AlxGa1-xAs grown by molecular beam epitaxy (MBE). This trap, having the largest capture cross section of the commonly observed levels in MBE material, is measured in samples with Al composition...

  • Selectively Se-doped AlGaAs/GaAs heterostructures with reduced DX center concentrations grown by molecular beam epitaxy. Ishikawa, Tomonori; Maeda, Takeshi; Kondo, Kazuo // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1926 

    We studied the DX center concentration in Se-doped AlxGa1-x As layers grown by molecular beam epitaxy. In the shallow to DX transition region around x=0.2, the concentration of DX centers was far lower when compared to that of Si-doped layers. We applied Se-doped AlGaAs layers to selectively...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics