Effects of GaAs/AlAs superlattice buffer layers on selective area regrowth for GaAs/AlGaAs self-aligned structure lasers

Noda, Susumu; Fujiwara, Kenzo; Nakayama, Takashi
December 1985
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1205
Academic Journal
The effects of GaAs/AlAs superlattice buffer layers on selective area regrowth by molecular beam epitaxy were investigated for self-aligned structure lasers. It is demonstrated that the superlattice buffer layer is an effective means to obtain a smoother interface with reduced alloy clustering, from which the threshold current was reduced and stable single transverse mode operation was obtained.


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