TITLE

Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous Si

AUTHOR(S)
Pai, C. S.; Lau, S. S.; Suni, I.; Csepregi, L.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1214
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electronic effects and stress effects for epitaxial regrowth rate enhancement in ion-implanted Si were investigated. By co-doping B and Ge into Si layers at the same time, the strain field introduced by these impurities in Si can be compensated. Significantly enhanced regrowth rates were obtained in B-Ge co-doped and stress-free Si samples. In contrast, only a slight increase in regrowth rate was observed in the strained Si samples doped only with Ge. These results lead us to conclude that the regrowth rate enhancement of ion-implanted Si is due mainly to the electronic effects.
ACCESSION #
9818568

 

Related Articles

  • Photothermoacoustic and photoelectric microscopy of silicon. Burbelo, R. M.; Kuz’mich, A. G.; Kucherov, I. Ya. // Semiconductors;Jun99, Vol. 33 Issue 6, p630 

    Combined photothermoacoustic and photoelectric microscopy is used to investigate silicon-based structures: an epitaxially grown n-type region in a p-type substrate, a p[sup -]p[sup +] interface obtained by implanting boron ions, and a region near a crack tip. It is concluded that the...

  • Effect of pressure on the solid phase epitaxial regrowth rate of Si. Nygren, Eric; Aziz, Michael J.; Turnbull, David; Poate, John M.; Jacobson, Dale C.; Hull, Robert // Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p232 

    The hydrostatic pressure dependence of the solid phase epitaxial growth rate of 〈100〉 Si into ion implanted amorphous Si at 500 °C has been monitored by Rutherford backscattering and channeling techniques. The growth rate increases with pressure so that at 20 kbar it is 14 times...

  • Vacancy defects in solid-phase epitaxial grown layers of self-implanted Si. Jun Xu; Roth, E.G.; Holland, O.W.; Mills Jr., A.P.; Suzuki, Ryoichi // Applied Physics Letters;2/15/1999, Vol. 74 Issue 7, p997 

    Discusses the defects present in a method for preparing shallow dopant distributions via solid-phase epitaxial growth (SPEG) following amorphization by low-energy Si self-ion implantation. Divacancy-impurity complexes seen in the SPEG layer; Larger vacancy clusters near the SPEG-crystalline...

  • Epitaxial alignment of arsenic implanted polycrystalline silicon films on <100> silicon obtained by rapid thermal annealing. Hoyt, J. L.; Crabbé, E.; Gibbons, J. F.; Pease, R. F. W. // Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p751 

    We have performed a quantitative analysis of epitaxial quality and arsenic diffusion in ion implanted polycrystalline silicon (polysilicon) layers on <100> Si, and find a clear advantage for the use of high-temperature rapid thermal annealing (RTA) in the 10-s regime to induce intentional,...

  • Three-dimensional solid-phase-epitaxial regrowth from As+-implanted Si. Horiuchi, M.; Tamura, M.; Aoki, S. // Journal of Applied Physics;3/15/1989, Vol. 65 Issue 6, p2238 

    Investigates solid-phase-epitaxial (SPE) regrowth from selectively arsenic ion-implanted amorphous silicon. Procedures observed in sample preparation; Information on defect generated just beneath the implantation mask edge, in addition to end of range and projected range defects; Role played by...

  • The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation. Aleksandrov, O. V. // Semiconductors;Aug2006, Vol. 40 Issue 8, p875 

    A model of segregation-induced redistribution of impurities of rare-earth elements during solid-phase epitaxial crystallization of silicon layers amorphized by ion implantation is developed. This model is based on the assumption that a transition layer with a high mobility of atoms is formed at...

  • Solid phase epitaxial regrowth of Si1-xGex/Si strained-layer structures amorphized by ion implantation. Chilton, B. T.; Robinson, B. J.; Thompson, D. A.; Jackman, T. E.; Baribeau, J.-M. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p42 

    Strained-layer structures consisting of ∼30–35 nm Si1-xGex (x=0.16–0.29) and 33 nm Si deposited by molecular beam epitaxy on a (100)Si substrate have been amorphized by ion implantation at 40 K with 120 keV As+. Rutherford backscattering/channeling measurements using 2 MeV He+...

  • Pulsed laser induced epitaxial crystallization of carbon–silicon alloys. Kramer, K. M.; Thompson, M. O. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4118 

    Provides information on a study which examined the non-equilibrium carbon-silicon alloys produced by laser induced epitaxy from ion implanted silicon. Epitaxial crystallization of carbon-silicon alloys; Application of pulsed laser in epitaxial crystallization; Use of transmission electron...

  • Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation. Roth, J. A.; Olson, G. L.; Jacobson, D. C.; Poate, J. M. // Applied Physics Letters;9/24/1990, Vol. 57 Issue 13, p1340 

    The kinetics of solid phase epitaxy (SPE) have been measured in MeV ion-implanted amorphous Si layers up to 5 μm thick. Epitaxial crystallization in these layers occurs at a constant rate throughout the entire film, without loss of interface planarity or competition from random nucleation or...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics