TITLE

Novel organic-on-InP field-effect transistor

AUTHOR(S)
Cheng, Chu-Liang; Forrest, Stephen R.; Kaplan, Martin L.; Schmidt, Paul H.; Tell, Benjamin
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1217
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the first organic-on-inorganic contact barrier semiconductor transistor. InP field-effect transistor similar to metal-semiconductor field-effect transistors was made by vacuum subliming a thin film of N, N’-dimethyl 3,4,9,10-perylenetetracarboxylic diimide onto Si-implanted channel, forming a gate contact. Good pinch-off characteristics and relatively small gate leakage current were obtained. The extrinsic transconductances for these devices are approximately 70–80 mS/mm, with a gate length of 1.5 μm and a channel carrier concentration in the high 1016 cm-3.
ACCESSION #
9818565

 

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