Stable Josephson reference voltages between 0.1 and 1.3 V for high-precision voltage standards

Niemeyer, J.; Grimm, L.; Meier, W.; Hinken, J. H.; Vollmer, E.
December 1985
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1222
Academic Journal
A new series array of 1440 Josephson tunnel junctions has been developed and tested as a reference voltage standard. It yields microwave induced quantized voltage steps up to 1.3 V. The steps are usually stable for more than 5 h with a microwave driving frequency of either 70 or 90 GHz. A high-resolution comparison of a constant voltage step at the 1-V level with the electromotive force of a saturated Weston cell is described. The comparison shows that the step voltage is constant to within ±1 nV over the full step width.


Related Articles

  • Determination of barrier traversal time by modulation of the incident wave. Hagmann, M.J. // Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p199 

    Examines the use of incident wave modulation to different sized barriers for testing convergence in tunneling measurements in Josephson junctions. Use of two interfering plane waves; Calculation of barrier sizes; Agreement of results with the Buttiker and Landauer calculations for opaque barriers.

  • Ideal tunneling characteristics in Ba1-xKxBiO3 point-contact junctions with Au and Nb tips. Huang, Qiang; Zasadzinski, J. F.; Gray, K. E.; Richards, D. R.; Hinks, D. G. // Applied Physics Letters;11/26/1990, Vol. 57 Issue 22, p2356 

    One important potential application of high-temperature superconductors is for tunnel junctions, especially hysteretic Josephson junctions. Unfortunately, tunnel junctions of oxide superconductors with a useful Tc>=20 K have exhibited nonideal I(V) characteristics with a normalized zero-bias...

  • Three-terminal quantum box resonant tunneling Josephson field-effect switch. van Houten, H. // Applied Physics Letters;3/25/1991, Vol. 58 Issue 12, p1326 

    Studies three-terminal quantum box resonant tunneling Josephson field-effect switch. Combination of an electrostatiscally tunable quantum resonant or ballistic device with superconducting source and drain contracts; Current-voltage characteristics of the quantum box version of the device.

  • 1- and 10-V series array Josephson voltage standards in Nb/Al2O3/Nb technology. Pöpel, R.; Niemeyer, J.; Fromknecht, R.; Meier, W.; Grimm, L. // Journal of Applied Physics;10/15/1990, Vol. 68 Issue 8, p4294 

    Presents information on a study which evaluated the voltage standards of Josephson tunneling junctions in niobium (Nb)/Al[sub2]O[sub3]/Nb technology. Description of the design; Replacement of the original quarter wavelength transformers with arcs and tapered stripline transitions; Termination...

  • Condensed-matter physics: Vortices and hearts. Clarke, John // Nature;9/11/2003, Vol. 425 Issue 6954, p133 

    Studies a single vortex of flux formed inside a superconducting Josephson junction which has been detected undergoing quantum tunneling. Controversy on the quantum tunneling of Abrikosov vortices; Annular junction made between two narrow rings of the superconductor niobium; Developments in...

  • Evaluation of AlOx barrier thickness in Nb Josephson junctions using anodization profiles. Imamura, Takeshi; Hasuo, Shinya // Applied Physics Letters;12/11/1989, Vol. 55 Issue 24, p2550 

    Using anodization profiles, we have analyzed the thin AlOx-Al tunneling barrier in a Nb/AlOx-Al/Nb Josephson junction. We measured the voltage width at the AlOx-Al barrier in the profiles and found that it is closely related to the AlOx-Al thickness. We proposed a way to evaluate this thickness...

  • High-quality Nb/HfO[sub x]-Hf/Nb Josephson junction. Morohashi, Shin'ichi; Imamura, Takeshi // Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3039 

    Reports the fabrication of a niobium Josephson junction with a hafnium (Hf) overlayer. Use of Hf native oxide formed by thermal oxidation as a tunneling barrier; Degradation of junction characteristics in deposition and annealing; Increase of subgap leakage current after annealing.

  • Inhomogeneities in arrays of Josephson junctions: Their imaging by low-temperature scanning electron microscopy. Bosch, J.; Gross, R.; Huebener, R. P.; Niemeyer, J. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p1004 

    The first application of low-temperature scanning electron microscopy for investigating the homogeneity of an array of Josephson tunnel junctions is reported. The experiments were performed on a series configuration of 166 junctions. The junction fabrication process was identical to that...

  • Resonant tunneling in amorphous-silicon-barrier Josephson junctions. Bradley, P.; Ruby, W.; Hebert, D.; Van Duzer, T. // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p5872 

    Presents information on a study which fabricated amorphous-silicon-barrier Josephson junctions to test the theory of resonant tunneling due to localized electron states. Potential barrier and image effects; Localized states and resonant tunneling; Conductance of a single localized state;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics