TITLE

Polymer film cutting and ablative etching using a 1-kHz XeCl laser

AUTHOR(S)
Bishop, G. J.; Dyer, P. E.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1229
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A 1-kHz XeCl laser has been used to investigate cutting and ablative etching of thin polymer films. Significant increases in cutting efficiency and etch rate occur at high pulse rates (>=100 Hz) apparently due to cumulative heating effects. Cut rates of 130 cm s-1 are obtained at 900 Hz for a 12-μm-thick polyethylene teraphthalate film.
ACCESSION #
9818555

 

Related Articles

  • Excimer laser induced ablation of polyetheretherketone, polyimide, and polytetrafluoroethylene. Babu, S. V.; D’Couto, G. C.; Egitto, F. D. // Journal of Applied Physics;7/15/1992, Vol. 72 Issue 2, p692 

    Presents a study that examined experimental data on the photoablation rate of polyetheretherketone and Kapton film by pulses of xenon chloride laser radiation. Experimental procedure; Results and discussion; Description of ablation rate models.

  • Parametric optimization of an easily constructed pulsed xenon-ion laser. Dai, C. M.; Wu, K. H.; Hsieh, W. F.; Chuu, D. S. // Review of Scientific Instruments;Dec1990, Vol. 61 Issue 12, p3713 

    An easily fabricated xenon-IV ion laser is described. The various parameters considered are the gas pressures, the excitation voltages, and the repetition rates. Based on our results we believe that there exists an optimal excitation voltage and an optimal repetition rate for achieving largest...

  • Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy. Green, R.P.; Krysa, A.; Roberts, J.S.; Revin, D.G.; Wilson, L.R.; Zibik, E.A.; Ng, W.H.; Cockburn, J.W. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1921 

    We report the room-temperature operation of λ≈8.5 μm InGaAs/AlInAs quantum cascade lasers, grown by low-pressure metalorganic vapor phase epitaxy. The necessary control of interfacial abruptness and layer thicknesses was achieved by the use of individually purged vent/run valves and...

  • Internal thermal stress distribution in InGaAsP/InP lasers. Liu, J. M.; Chen, Y. C.; Wayne, S. F. // Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p895 

    The two-dimensional distribution of the internal thermal stress in the active layer of a buried heterostructure InGaAsP/InP laser is calculated with the finite-element method for active regions of both rectangular and crescent shapes. The shape and the finite width of the stripe cause nonuniform...

  • Laser direct writing of single-crystal III-V compounds on GaAs. Karam, N. H.; El-Masry, N. A.; Bedair, S. M. // Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p880 

    Laser selective chemical vapor deposition and direct writing of GaAs and its ternary alloys with P have been achieved on GaAs substrates. An Ar+ laser is used to locally heat areas where selective deposition is desired on a substrate which is uniformly biased to a temperature in the range of...

  • Structure and superconducting properties of Y1Ba2Cu3O7-δ films prepared by transversely excited atmospheric pressure CO2 pulsed laser evaporation. Miura, S.; Yoshitake, T.; Satoh, T.; Miyasaka, Y.; Shohata, N. // Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p1008 

    Superconducting Y1Ba2Cu3O7-δ films were prepared by TEA-CO2 pulsed laser evaporation. On SrTiO3(100) the a axis was oriented perpendicular to the substrate surface, while the <110> axis was oriented perpendicular to the substrate surface on SrTiO3(110). Sharp resistive superconducting...

  • Infrared detection of gaseous species during the filament-assisted growth of diamond. Celii, F. G.; Pehrsson, P. E.; Wang, H.-t.; Butler, J. E. // Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2043 

    Infrared diode laser absorption spectroscopy is employed as an in situ method to examine gas phase species present during filament-assisted deposition of diamond films. From a reactant mixture of 0.5% methane in hydrogen, methyl radical (CH3 ), acetylene (C2H2), and ethylene (C2H4 ) are detected...

  • Spectroscopic and ion probe measurements of KrF laser ablated Y-Ba-Cu-O bulk samples. Dyer, P. E.; Greenough, R. D.; Issa, A.; Key, P. H. // Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p534 

    The KrF laser ablation of Y-Ba-Cu-O bulk samples has been studied using visible UV spectroscopy and ion probes. Principal luminescent species, expansion velocities, and the extent of ionization in the ablation plume have been determined in this way, providing information on the interaction of...

  • Thin-film deposition by a new laser ablation and plasma hybrid technique. Krishnaswamy, J.; Rengan, A.; Narayan, J.; Vedam, K.; McHargue, C. J. // Applied Physics Letters;6/12/1989, Vol. 54 Issue 24, p2455 

    We have developed a new laser ablation and plasma hybrid technique for depositing thin diamond-like carbon (DLC) films on Si<100> substrates at room temperature and at 110 °C with improved optical and mechanical properties. The technique involves coupling of laser energy (λ=0.308 μm,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics