High-speed monolithically integrated GaAs photoreceiver using a metal-semiconductor-metal photodiode

Ito, M.; Kumai, T.; Hamaguchi, H.; Makiuchi, M.; Nakai, K.; Wada, O.; Sakurai, T.
December 1985
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1129
Academic Journal
A planar monolithically integrated GaAs photoreceiver involving a transimpedance preamplifier has been fabricated using a metal-semiconductor-metal (MSM) photodiode. The present MSM photodiode showed a small capacitance of 0.14 pF, which is much smaller than in conventional p-i-n photodiodes, and a high-speed pulse response exhibiting a rise time of 300 ps was demonstrated. It is shown that an MSM photodiode is suitable for monolithic integration due not only to the simple process but also because of its high-speed operation.


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