TITLE

High-speed monolithically integrated GaAs photoreceiver using a metal-semiconductor-metal photodiode

AUTHOR(S)
Ito, M.; Kumai, T.; Hamaguchi, H.; Makiuchi, M.; Nakai, K.; Wada, O.; Sakurai, T.
PUB. DATE
December 1985
SOURCE
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1129
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A planar monolithically integrated GaAs photoreceiver involving a transimpedance preamplifier has been fabricated using a metal-semiconductor-metal (MSM) photodiode. The present MSM photodiode showed a small capacitance of 0.14 pF, which is much smaller than in conventional p-i-n photodiodes, and a high-speed pulse response exhibiting a rise time of 300 ps was demonstrated. It is shown that an MSM photodiode is suitable for monolithic integration due not only to the simple process but also because of its high-speed operation.
ACCESSION #
9818544

 

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