Optoelectronic properties of Cd1-xZnxTe films grown by molecular beam epitaxy on GaAs substrates

Olego, D. J.; Faurie, J. P.; Sivananthan, S.; Raccah, P. M.
December 1985
Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1172
Academic Journal
Photoluminescence (PL) experiments were carried out at 300 and 12 K to investigate the electro-optical properties of Cd1-xZnxTe grown by molecular beam epitaxy on GaAs substrates. The compositional dependence of the band-gap energy was determined. It has a quadratic dependence on x. The near band edge PL spectra at 12 K show free and bound exciton lines for x=0 and 1 and only broadened bound exciton peaks for other compositions. The bound exciton broadenings are quantitatively explained based on the compositional fluctuations of the cations. The PL line shapes give indications of the high quality of the layers.


Related Articles

  • Growth kinetics and properties of heteroepitaxial ZnTe films grown by metalorganic molecular.... Rajavel, D.; Zinck, J.J. // Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1534 

    Examines the growth of zinc telluride films on (001) gallium arsenide by metalorganic molecular beam epitaxy. Measurement of the reflection high energy electron diffraction intensity oscillations; Indication of film carbon contamination by secondary ion mass spectroscopic analysis; Features...

  • ZnTe nanowires grown catalytically on GaAs (001) substrates by molecular beam epitaxy. Janik, E.; Sadowski, J.; Dłużewski, P.; Kret, S.; Presz, A.; Baczewski, L. T.; Łusakowska, E.; Wróbel, J.; Karczewski, G.; Wojtowicz, T. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p103 

    We report on the first successful growth of ZnTe nanowires and on their basic structural properties. The nanowires were produced by molecular beam epitaxy (MBE) with the use of mechanism of catalytically enhanced growth. A thin layer of gold layer (3 to 20 Ã… thick) annealed in high vacuum...

  • Effects of Zn to Te ratio on the molecular-beam epitaxial growth of ZnTe on GaAs. Feldman, R. D.; Austin, R. F.; Bridenbaugh, P. M.; Johnson, A. M.; Simpson, W. M.; Wilson, B. A.; Bonner, C. E. // Journal of Applied Physics;8/1/1988, Vol. 64 Issue 3, p1191 

    Presents a study that investigated the effects of zinc and tellurium ratio on the molecular-beam epitaxial growth of zinc telluride and gallium arsenide. Details of the experiment; Results; Conclusions.

  • Intrinsic and extrinsic photoluminescence spectra of ZnTe films on GaAs deposited by molecular-beam and organo-metallic vapor-phase epitaxy. Wilson, B. A.; Bonner, Carl E.; Feldman, R. D.; Austin, R. F.; Kisker, D. W.; Krajewski, J. J.; Bridenbaugh, P. M. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3210 

    Investigates the intrinsic and extrinsic photoluminescence spectra of zinc tellutride films on gallium arsenide deposited by molecular-beam and organo-metallic vapor-phase epitaxy. Experimental details; Materials and methods used: Result of the study.

  • Long-Wavelength IR Spectroscopy of ZnTe/CdTe Superlattices with Quantum Dots. Vodop'yanov, L.K.; Kozyrev, S.P.; Karczewski, G. // Physics of the Solid State;Sep2003, Vol. 45 Issue 9, p1798 

    This paper reports on the results of investigations of the lattice IR reflection spectra of ZnTe/CdTe multilayer superlattices with CdTe quantum dots grown by molecular-beam epitaxy on a GaAs substrate with a CdTe buffer layer. It is found that the lattice IR reflection spectra of the studied...

  • Complete strain relief of heteroepitaxial GaAs on silicon. Burns, Geoffrey F.; Fonstad, Clifton G. // Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2199 

    Produces high quality strain-free heteroepitaxial GaAs-on-Si by annealing chemically separated gallium arsenide epitaxial layers grown by molecular beam epitaxy. Development of process sequence; Elimination of residual strain; Basis for monolithic integration of high quality strain free...

  • Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100). Reno, J. L.; Gourley, P. L.; Monfroy, G.; Faurie, J. P. // Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1747 

    CdTe (111) layers were grown by molecular beam epitaxy on oriented and misoriented GaAs (100) substrates. The layers were characterized by x-ray diffraction and photoluminescence microscopy. The results indicate that the CdTe layers grown on GaAs (100) misoriented 2° towards the [110]...

  • Dislocation reduction in HgCdTe on GaAs by thermal annealing. Sasaki, Tokuhito; Oda, Naoki // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p3121 

    Investigates the effect of dislocation reduction in mercury (Hg)-cadmium (Cd)-tellurium (Te) epilayers grown on gallium arsenide substrates by molecular-beam epitaxy. Use of thermal annealing in a Hg atmosphere; Occurrence of dislocaion annihilation and reemission; Thickness of the CdTe buffer...

  • Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained-layer single quantum wells and superlattices on GaAs substrates. Fujita, Shizuo; Wu, Yi-hong; Kawakami, Yoichi; Fujita, Shigeo // Journal of Applied Physics;12/1/1992, Vol. 72 Issue 11, p5233 

    Presents a study that examined metalorganic molecular beam epitaxial growth and characterization of cadmium selenium/zinc-selenium strained-layer single quantum wells and superlattices on gallium arsenide substrates. Observation of reflection high-energy electron diffraction oscillations during...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics