TITLE

Effect of electronic strain on photoacoustic generation in silicon

AUTHOR(S)
Stearns, R. G.; Kino, G. S.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1048
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The photogeneration of excess free carriers gives rise to a mechanical strain in semiconductors. An experiment has been performed to investigate the contribution of this electronic strain to photoacoustic generation, and it is found that electronic strain is an important mechanism in the photogeneration of acoustic waves in silicon. A theory is developed to predict the contribution of the electronic strain to the photoacoustic generation and is found to agree well with experiment.
ACCESSION #
9818507

 

Related Articles

  • Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections. Kenji Tsuda; Hajime Mitsuishi; Masami Terauchi; Kazuo Kawamura // Journal of Electron Microscopy;Apr2007, Vol. 56 Issue 2, p57 

    Local lattice strains of semiconductor devices have been so far examined using higher order Laue zone (HOLZ) line patterns of convergent-beam electron diffraction (CBED). Recently, strain analyses in highly strained regions near interfaces have been reported using split HOLZ line patterns. In...

  • Elastic Strain and Composition of Self-Assembled GeSi Nanoislands on Si(001). Vostokov, N. V.; Gusev, S. A.; Dolgov, I. V.; Drozdov, Yu. N.; Krasil’nik, Z. F.; Lobanov, D. N.; Moldavskaya, L. D.; Novikov, A. V.; Postnikov, V. V.; Filatov, D. O. // Semiconductors;Jan2000, Vol. 34 Issue 1, p6 

    The growth of self-assembled Ge islands on Si(001) surface and changes in the island structure parameters in the course of subsequent annealing were studied. Island structures possessing a small (∼6%) scatter with respect to lateral dimensions and heights of the islands were obtained. The...

  • Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier-induced defect creation’’ model correct? Gelatos, A. V.; Kanicki, J. // Applied Physics Letters;9/17/1990, Vol. 57 Issue 12, p1197 

    The effects of positive and negative bias stress on hydrogenated amorphous silicon nitride/hydrogenated amorphous silicon (a-SiNx:H/a-Si:H) structures are investigated as a function of stress time, and stress temperature. It is shown that bias stress induces a parallel shift of the capacitance...

  • Stresses, curvatures, and shape changes arising from patterned lines on silicon wafers. Shen, Y.-L.; Suresh, S.; Blech, I. A. // Journal of Applied Physics;8/1/1996, Vol. 80 Issue 3, p1388 

    Deals with a study which investigated the stresses, curvatures and shape changes arising from patterned lines on silicon wafers. Experimental details and the numerical model; Simulation of the deformation induced by thermal mismatch; Result of the study.

  • Analyzing strained-silicon options for stress-engineering transistors. Moroz, Victor; Xiaopeng Xu; Pramanik, Dipu; Nouri, Faran; Krivokapic, Zoran // Solid State Technology;Jul2004, Vol. 47 Issue 7, p49 

    Analyzes the strained-silicon options for stress-engineering transistors. Effect of stresses on bandgap and carrier mobility in silicon; Side effects of oxidation; Details on the contraction rates of the adjacent materials during temperature ramps.

  • Implant damage and strain relaxation of embedded epitaxial silicon germanium layer on silicon. Liu, J. P.; Li, J.; See, A.; Zhou, M. S.; Hsia, L. C. // Applied Physics Letters;6/25/2007, Vol. 90 Issue 26, p261915 

    The authors report on the implant damage and strain relaxation in embedded silicon germanium (SiGe) layer, selectively grown on recessed silicon (Si) (001) with different recess length (defined as [110] direction, along the conventional Si transistor channel) and the same width (defined as...

  • Stress in sputtered TaSix films on polycrystalline silicon. Draper, Bruce L. // Applied Physics Letters;1984, Vol. 44 Issue 9, p863 

    Stress in TaSix/polycrystalline silicon structures has been examined as a function of film composition, annealing conditions, and deposition parameters. It was found that although stress in as-deposited films is a strong function of these variables, annealed films exhibit a large tensile stress...

  • Comment on 'The effects of Si doping on dislocation movement and tensile stress in GaN films' [J. Appl. Phys. 109, 073509 (2011)]. Dadgar, A.; Krost, A. // Journal of Applied Physics;Nov2011, Vol. 110 Issue 9, p096101 

    In the publication by Moram et al. [J. Appl. Phys. 109, 073509 (2011)], some statements were made which disagree with the measurements presented by the authors of the article. In particular, silicon doping is claimed to suppress dislocation movement in GaN epitaxy hampering stress reduction...

  • Mobility improvement in nanowire junctionless transistors by uniaxial strain. Raskin, Jean-Pierre; Colinge, Jean-Pierre; Ferain, Isabelle; Kranti, Abhinav; Chi-Woo Lee; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran // Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p042114 

    Improvement of current drive in n- and p-type silicon junctionless metal-oxide-semiconductor-field-effect-transistors (MOSFETs) using strain is demonstrated. Junctionless transistors have heavily doped channels with doping concentrations in excess of 1019 cm-3 and feature bulk conduction, as...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics