TITLE

Imaging of oxide precipitates in silicon with ballistic phonons

AUTHOR(S)
Metzger, W.; Huebener, R. P.; Haug, R. J.; Habermeier, H.-U.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1051
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ballistic phonons were generated at low temperatures in nearly single-crystalline silicon by scanning the specimen surface with an electron beam. At the opposite sample surface the ballistic phonons were detected with two small-area bolometers placed at different locations. For a Si specimen which had been annealed for 150 h at 1050 °C, the ballistic phonon image contained fine structure which could be attributed to oxide precipitates. Comparing the phonon images obtained with the two bolometers, we concluded that the structural inhomogeneities affecting the ballistic phonon propagation were located far from the specimen surface scanned by the electron beam. With these experiments a new principle of three-dimensional tomography based on ballistic phonons has been demonstrated.
ACCESSION #
9818504

 

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