Germanium film on SiO2 with a <100> texture deposited by the rf sputtering technique

Egami, Koji; Ogura, Atsushi
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1059
Academic Journal
Germanium (Ge) films on SiO2 with <100> texture deposited by a sputtering technique and the texture enhancement by a subsequent solid-state thermal annealing are demonstrated for the first time. A 0.6-μm-thick Ge film on a surface oxidized Si wafer deposited by the rf sputtering technique at 600 °C produces a <100> texture, and the preferential orientation of the film is enhanced by a conventional grain growth process at 900 °C (approximately 0.95Tm, where Tm is the melting point in the Kelvin scale) for 1 h, while the crystallographic texture of the films has never changed at 650 °C (0.75Tm) annealing. The texture enhancement is interpreted by the existence of <100> oriented precursors and a simple coalescence and rearrangement model.


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