TITLE

Preparation of highly photosensitive hydrogenated amorphous Si-Ge alloys using a triode plasma reactor

AUTHOR(S)
Matsuda, A.; Yagii, K.; Koyama, M.; Toyama, M.; Imanishi, Y.; Ikuchi, N.; Tanka, K.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1061
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Highly photoconductive hydrogenated amorphous Si-Ge alloys have been prepared from a SiH4/GeH4 gas mixture using a triode glow-discharge reactor. High photoconductivity (Δσp[bar_over_tilde:_approx._equal_to]10-4 Ω-1 cm-1) under the AM1 (100 mW/cm2) illumination and low dark conductivity (σd=10-8–10-9 Ω-1 cm-1) have been obtained for the optical gap in the range between 1.5 and 1.7 eV.
ACCESSION #
9818500

 

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