Preparation of highly photosensitive hydrogenated amorphous Si-Ge alloys using a triode plasma reactor

Matsuda, A.; Yagii, K.; Koyama, M.; Toyama, M.; Imanishi, Y.; Ikuchi, N.; Tanka, K.
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1061
Academic Journal
Highly photoconductive hydrogenated amorphous Si-Ge alloys have been prepared from a SiH4/GeH4 gas mixture using a triode glow-discharge reactor. High photoconductivity (Δσp[bar_over_tilde:_approx._equal_to]10-4 Ω-1 cm-1) under the AM1 (100 mW/cm2) illumination and low dark conductivity (σd=10-8–10-9 Ω-1 cm-1) have been obtained for the optical gap in the range between 1.5 and 1.7 eV.


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