Novel ultrahigh resolution silverless photothermal imaging in obliquely deposited amorphous Se-Ge films

Harshavardhan, K. Solomon; Krishna, K. N.
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1074
Academic Journal
A new photothermal imaging process which utilizes no silver has been demonstrated in obliquely deposited Se-Ge films. Band-gap irradiation of Se-Ge films has been found to give rise to phases of the type SeOx, GeO, and Se as borne by x-ray initiated Auger electron spectroscopy and x-ray photoelectron spectroscopy. Annealing of SeOx leads to the formation of SeO2. The large (several orders of magnitude) difference in vapor pressures of SeO2 and Se-Ge films results in differential evaporation of the films when annealed around 200 °C, thereby leading to imaging. Such a large contrast in evaporation rates between the exposed and unexposed regions has great potential applications in high resolution image storage and phase holography.


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