TITLE

Variations in interface compound nucleation for Ti-Al ultrathin films on Si substrates

AUTHOR(S)
Han, C. C.; Bené, R. W.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1077
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have determined the structures of compounds nucleated in a series of sequentially sputtered thin bilayer films of Al and Ti on Si substrates for a range of metal thicknesses and for both (100) and (111) substrates. The compound structures were determined by transmission electron microscopy and diffraction, augmented by Auger electron spectroscopy. An annealing temperature of about 380 °C for 30 min was required to produce compound nucleation. For the Ti/Al/Si(100) system it was found that the phases which were nucleated for samples with 30-min, 380 °C anneals varied from TiAl3 to Ti8Al24 to an unknown compound of tetragonal structure (a=b=5.782 Å, c=6.713 Å) as the Al intermediate layer thickness is changed from 200 to 60 to 40 Å. TiAl3 was the compound nucleated at 380 °C for all other cases. Finally, 410 °C annealing of the Al/Ti/Si(100) samples for 30 min resulted in formation of an apparently Al-altered form of TiSi2.
ACCESSION #
9818491

 

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