Pulsed high rate plasma etching with variable Si/SiO2 selectivity and variable Si etch profiles

Boswell, R. W.; Henry, D.
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1095
Academic Journal
Very high etch rates of Si in SF6 have been obtained in a low-pressure resonant rf discharge. By pulsing the discharge the etch selectivity between Si and SiO2 can be varied from greater than 100 at high repetition rates to around 6 at low repetition rates or continuous operation. A ‘‘lifetime’’ of atomic fluorine has been derived which is in agreement with previous measurements. With a biased substrate the etch profile can be varied from isotropic at high repetition rates to anisotropic with continuous operation.


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