TITLE

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

AUTHOR(S)
Goldstein, L.; Glas, F.; Marzin, J. Y.; Charasse, M. N.; Le Roux, G.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1099
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InAs/GaAs superlattices with ultra-thin InAs (few monolayer) were grown on GaAs substrates. Nucleation of InAs occurs in a two-dimensional or a three-dimensional way depending on the growth conditions. The physical properties: x ray, transmission electron microscopy, and photoluminescence were used to characterize the different growth processes.
ACCESSION #
9818478

 

Related Articles

  • Growth of a novel InAs-GaAs strained layer superlattice on InP. Tamargo, M. C.; Hull, R.; Greene, L. H.; Hayes, J. R.; Cho, A. Y. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p569 

    Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

  • Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy. Gérard, J. M.; Marzin, J. Y.; Jusserand, B.; Glas, F.; Primot, J. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p30 

    InAs/GaAs highly strained short-period superlattices have been grown by migration-enhanced epitaxy on InP(001) substrates. Such samples exhibit clearly improved structural and optical properties. X-ray diffraction, scanning transmission electron microscopy, photoluminescence, and Raman...

  • Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110). Ito, Tomonori; Akiyama, Toru; Nakamura, Kohji // Physica Status Solidi (B);Apr2018, Vol. 255 Issue 4, p1 

    The growth mode of InAs/GaAs(110) is systematically investigated using our macroscopic theory with the aid of ab initio calculations that determine the parameter values used in the macroscopic theory. Formations of misfit dislocation and island are employed as strain relaxation mechanisms. The...

  • Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy. Chan, C. H.; Lee, C. H.; Huang, Y. S.; Wang, J. S.; Lin, H. H. // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p103102 

    This work systematically investigates the influence of InAs growth conditions and superlattice parameters on the optical properties of InAs/GaAs quantum dot (QD) superlattice structures grown by molecular beam epitaxy. Using surface photovoltage spectroscopy, one directly obtains the absorption...

  • GaAsN/InAsN superlattice based multijunction thermophotovoltaic devices. Bhusal, L.; Freundlich, A. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p074907 

    Quantitative modeling of the performance of a single and multijunction p(InGaAs)-i(superlattice)-n(InGaAs) device lattice matched to InP utilizing a GaAsN/InAsN superlattice structure is performed, and the results are compared quantitatively with the bulk metamorphic InGaAs counterpart devices....

  • Electroabsorption effects in InxGa1-xAs/GaAs strained-layer superlattices. Niki, S.; Kellner, A. L.; Lin, S. C.; Cheng, A.; Williams, A. R.; Chang, W. S. C.; Wieder, H. H. // Applied Physics Letters;1/29/90, Vol. 56 Issue 5, p475 

    Electroabsorption of strained-layer Inx Ga1-x As/GaAs superlattice structures grown by molecular beam epitaxy on GaAs substrates was experimentally investigated. Its spectral characteristics were found to be similar to those of Franz–Keldysh electroabsorption of bulk semiconductor...

  • Unipolar infrared detectors based on InGaAs/InAsSb ternary superlattices. Ariyawansa, Gamini; Reyner, Charles J.; Duran, Joshua M.; Reding, Joshua D.; Scheihing, John E.; Steenbergen, Elizabeth H. // Applied Physics Letters;7/11/2016, Vol. 109 Issue 2, p021112-1 

    Growth and characteristics of mid-wave infrared (MWIR) InGaAs/InAsSb strained layer superlattice (SLS) detectors are reported. InGaAs/InAsSb SLSs, identified as ternary SLSs, not only provide an extra degree of freedom for superlattice strain compensation but also show enhanced absorption...

  • GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics. Utrilla, A. D.; Reyes, D. F.; Ulloa, J. M.; Gonzalez, D.; Ben, T.; Guzman, A.; Hierro, A. // Applied Physics Letters;7/28/2014, Vol. 105 Issue 4, p1 

    The application of a GaAsSb/GaAsN short-period superlattice capping layer (CL) on InAs/GaAs quantum dots (QDs) is shown to be an option for providing improved luminescence properties to this system. Separating both GaAsSb and GaAsN ternaries during the growth in 2 monolayer-thick phases solves...

  • Growth and transport properties of InAs epilayers on GaAs. Kalem, Seref; Chyi, Jen-Inn; Morkoç, Hadis; Bean, Ross; Zanio, Ken // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1647 

    A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics