Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Goldstein, L.; Glas, F.; Marzin, J. Y.; Charasse, M. N.; Le Roux, G.
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1099
Academic Journal
InAs/GaAs superlattices with ultra-thin InAs (few monolayer) were grown on GaAs substrates. Nucleation of InAs occurs in a two-dimensional or a three-dimensional way depending on the growth conditions. The physical properties: x ray, transmission electron microscopy, and photoluminescence were used to characterize the different growth processes.


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