Electrical conductivity of p-type CuInSe2 thin films

Datta, T.; Noufi, R.; Deb, S. K.
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1102
Academic Journal
The dark ohmic conductivity σ(T) of several p-type CuInSe2 thin films of different compositions was measured in vacuum in the temperature range 100–350 K. The room-temperature resistivity of Cu-rich, highly conducting films and the Cu-poor, highly resistive films varied by seven orders of magnitude. For the most conducting films (Cu:In>1, ρ∼0.1 Ω cm), σ(T) was pseudometallic, i.e., dσ/dT<=0. The Cu-poor films exhibited a thermally activated conductivity, i.e., σ(T)=σ0 exp(-E/kT), over a considerable temperature range. The data of post-deposition anneal in air and subsequently in hydrogen are in excellent agreement with Meyer–Neldel type of conduction, i.e., σ(T)=σ00 exp(-E/kT0)exp(E/kT). We attribute this behavior to the compensation of the films by oxygen.


Related Articles

  • Structural disordering studies of Cu6PS5I-based thin films deposited by magnetron sputtering. Studenyak, Ihor; Rybak, Stefan; Bendak, Andrii; Izai, Vitalii; Guranich, Pavlo; Kúš, Peter; Mikula, Marian // EPJ Web of Conferences;2017, Vol. 133, p1 

    Cu6PS5I-based thin films were deposited onto silicate glass substrates by magnetron sputtering. With Cu content increase, a red shift of the optical transmission spectra as well as increase of the total electric conductivity are observed. A typical Urbach bundle are revealed, the temperature...

  • Transparent p-type conducting CuScO[sub 2+x] films. Duan, N.; Sleight, A. W.; Jayaraj, M. K.; Tate, J. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    Transparent films of CuScO[sub 2+x] have been prepared which show p-type electrical conductivity. The temperature dependence of the conductivity indicates semiconducting behavior with an apparent room temperature activation energy of 0.11 eV. The highest room temperature conductivity observed...

  • An exploratory study of the conduction mechanism of hydrogenated nanocrystalline silicon films. Yuliang He; Yayi Wei; Zheng, Guozhen; Yu, Minbin; Liu, Min // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3408 

    Studies the conduction mechanism of hydrogenated nanocrystalline silicon films. Use of an ultrahigh vacuum plasma enhanced chemical vapor deposition system; Preparation of nc-Si:H films with high conductivity; Existence of size effect on the conduction process; Calculation of the partial...

  • Modeling of electrical conductance variation in substrate during initial growth of ultra thin film. Seok-Kyun Song; Hyung-Jin Jung // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p850 

    Proposes a model of electrical conductance of a resistive or semiconductor substrate as a function of the average thickness of a deposited film in initial growth of ultra thin film. Terms for the total conductance; Classification of the conductance variation of a film; Implications for the in...

  • Photoinduced hole-doping effect in (Y[sub 0.5]Ca[sub 0.5])Ba[sub 2]Cu[sub 3]O[sub delta] films. Lin, C.L.; Lin, Y.K. // Applied Physics Letters;12/1/1997, Vol. 71 Issue 22, p3284 

    Examines the persistent photoinduced changes in the critical temperature T[sub C] and the normal state conductivity of (Y[sub 0.5]Ca[sub 05.])Ba[sub 2]Cu[sub 3]O[sub delta] thin films. Method for doping the current system; Observation of the photoinduced T[sub C] reduction in the overdoped...

  • Submillimeter spectroscopy of tilted Nd[sub 1.85]Ce[sub 0.15]CuO[sub 4-δ] films: Observation of a mixed ac-plane excitation. Pimenov, A.; Pronin, A. V.; Pronin, A.V.; Loidl, A.; Loidi, A.; Kampf, A. P.; Kampf, A.P.; Krasnosvobodtsev, S. I.; Krasnosvobodtsev, S.I.; Nozdrin, V. S.; Nozdrin, V.S. // Applied Physics Letters;7/17/2000, Vol. 77 Issue 3 

    The anisotropic conductivity of a series of tilted Nd[sub 1.85]Ce[sub 0.15]CuO[sub 4-δ] thin films was measured by quasioptical spectroscopy in the frequency range 6 cm[sup -1]<ν<40 cm[sup -1]. Two characteristic features have been observed in the low-temperature transmission spectra. The...

  • Electrical Characterization of Epitaxial Bi: 2201 Thin Films Deposited on MgO Substrates Using Inverted Cylindrical Magnetron Sputtering. Pop, A. V.; Ilonca, G.; Pop, Mariana; Deltour, R. // Modern Physics Letters B;2/20/2002, Vol. 16 Issue 4, p127 

    Bi[sub 2.1]Sr[sub 1.9]CuO[sub y] thin films (Bi:2201) were deposited onto heated single crystal (100) MgO substrates using inverted cylindrical DC magnetron sputtering with different partial pressures of oxygen in a sputtering gas. The behavior of the normal state resistivity function of...

  • Nanometer-scale electrical characterization of stressed ultrathin SiO[sub 2] films using conducting atomic force microscopy. Porti, M.; Nafría, M.; Aymerich, X.; Olbrich, A.; Ebersberger, B. // Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4181 

    A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO[sub 2] films on a nanometer scale (areas of approx. 100 nm[sup 2]). Before oxide breakdown, switching between two states...

  • CuInS2 thin film growth monitoring by in situ electric conductivity measurements. Alt, M.; Lewerenz, H.J. // Journal of Applied Physics;1/15/1997, Vol. 81 Issue 2, p956 

    Demonstrates the use of in situ electrical conductivity measurements to monitor the growth of copper indium sulphide (CuInS2) thin films by coevaporation. Films with different cation ratio In/(In+Cu); Formation of semimetallic CuS phase in Cu-rich films; Dominance of charged grain boundary...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics