Potential material for electroluminescence devices in the visible region

Joshi, N. V.; Ray, S.; Menk, G.
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1108
Academic Journal
High intensity photoluminescence response has been observed in the visible region (λ=600 nm) in a diluted magnetic semiconductor system Zn1-xMnxS (0.05≤x≤0.4) at 300 and 77 K for the first time. The temperature and concentration independent position of the observed peak can be attributed to the intraionic transition of Mn++. Considering the crystal field splitting parameter and Racah’s coefficient and using the diagram proposed by Y. Tanabe and S. Sugano [J. Phys. Soc. Jpn. 9, 753 (1954)], the luminescence transition responsible for the observed peak was found to be 4T1–6A1. On the basis of high luminescence response, Zn1-xMnxS could be a promising material for electroluminescence devices in the range where photopic response of the human eye is nearly maximum.


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