Neutral carbon-related complex defects and the annealing of thermal donors in p-type Czochralski silicon

Weman, H.; Monemar, B.; Holtz, P. O.
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1110
Academic Journal
The influence of different consecutive annealing cycles on the formation of thermal donors and related neutral (isoelectronic) complex defect in p-type B-doped Czochralski Si has been studied by a combination of photoluminescence, infrared transmission, and electrical measurements. It is concluded that the 767 meV neutral defect is closely related to thermal donors (TD’s), and is probably created from such complexes by the reaction of one C atom with the virgin complex TD’s, neutralizing the TD core. Both the TD’s and the 767 meV defects disappear upon a second annealing at 650 °C. If another subsequent annealing cycle at 450 °C is attempted, TD’s are formed, but not the 767 meV neutral defects.


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