Rapid thermal nitridation of SiO2 for nitroxide thin dielectrics

Moslehi, Mehrdad M.; Saraswat, Krishna C.; Shatas, Steven C.
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1113
Academic Journal
Nitroxide thin films have been grown by rapid thermal nitridation of oxidized silicon in ammonia. The kinetics of formation of the surface and interface nitrogen-rich layers has been investigated and correlated to the electrical behavior of these films. It could be concluded that rapid thermal nitridation of ≊100 Å SiO2 results in negative shift of flatband voltage, slightly increases the surface state density, increases the low-field conductivity, reduces the high-field conductivity, improves the dielectric breakdown field, modifies the trapping behavior of the insulator, and slows down the generation rate of new surface states due to high-field electrical stress.


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