Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

Ikeda, Masao; Mori, Yoshifumi; Sato, Hiromitsu; Kaneko, Kunio; Watanabe, Naozo
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1027
Academic Journal
Continuous-wave (cw) operation at temperatures up to 23 °C of an Al0.26Ga0.26In0.48P/Ga0.52In0.48P/ Al0.26Ga0.26In0.48P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 °C for a device with a 10-μm-wide and 250-μm-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 °C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (∼0.3 μm) p-AlGaInP layer and a p-Al0.76Ga0.24As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.


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