Control of titanium-silicon and silicon dioxide reactions by low-temperature rapid thermal annealing

Brillson, L. J.; Slade, M. L.; Richter, H. W.; Vander Plas, H.; Fulks, R. T.
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1080
Academic Journal
Auger electron spectroscopy/depth profiling measurements demonstrate that titanium silicide forms between titanium and silicon dioxide at conventional annealing temperatures. Low-temperature rapid thermal annealing provides a process window in time and temperature to suppress this parasitic reaction relative to silicide formation at titanium-silicon interfaces within the same thin-film structure.


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