Heterojunction band discontinuity control by ultrathin intralayers

Niles, D. W.; Margaritondo, G.; Perfetti, P.; Quaresima, C.; Capozi, M.
November 1985
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1092
Academic Journal
We present evidence that the band lineup at a semiconductor-semiconductor heterojunction interface can be changed and potentially controlled by an ultrathin metal intralayer. Synchrotron-radiation photoemission experiments demonstrate that 0.5–2-Å-thick Al intralayers increase the valence-band discontinuity of CdS-Ge and CdS-Si heterojunctions by 0.15 eV on the average.


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