TITLE

Heterojunction band discontinuity control by ultrathin intralayers

AUTHOR(S)
Niles, D. W.; Margaritondo, G.; Perfetti, P.; Quaresima, C.; Capozi, M.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1092
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present evidence that the band lineup at a semiconductor-semiconductor heterojunction interface can be changed and potentially controlled by an ultrathin metal intralayer. Synchrotron-radiation photoemission experiments demonstrate that 0.5–2-Å-thick Al intralayers increase the valence-band discontinuity of CdS-Ge and CdS-Si heterojunctions by 0.15 eV on the average.
ACCESSION #
9818452

 

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