Phase formation and reaction kinetics in the thin-film Co/GaAs system

Yu, A. J.; Galvin, G. J.; Palmstro\m, C. J.; Mayer, J. W.
November 1985
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p934
Academic Journal
The solid state reaction between a Co thin film and (100) GaAs was investigated using Rutherford backscattering spectrometry. At 400 °C a reacted layer of composition Co:Ga:As=2:1:1 was observed to form. This reaction product obeys diffusion controlled growth kinetics and maintains its composition for annealing (400 °C) from 15 min up to 24 h.


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