TITLE

Phase formation and reaction kinetics in the thin-film Co/GaAs system

AUTHOR(S)
Yu, A. J.; Galvin, G. J.; Palmstro\m, C. J.; Mayer, J. W.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p934
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The solid state reaction between a Co thin film and (100) GaAs was investigated using Rutherford backscattering spectrometry. At 400 °C a reacted layer of composition Co:Ga:As=2:1:1 was observed to form. This reaction product obeys diffusion controlled growth kinetics and maintains its composition for annealing (400 °C) from 15 min up to 24 h.
ACCESSION #
9818432

 

Related Articles

  • The interaction between thin films of cobalt and GaAs (001) substrates. Genut, M.; Eizenberg, M. // Journal of Applied Physics;12/1/1989, Vol. 66 Issue 11, p5456 

    Presents a study which examined the interfacial reactions between thin films of cobalt and gallium arsenide (GaAs) substrates. Experimental methods used; Characteristics of cobalt films after deposition on GaAs; Interaction between the cobalt film and the GaAs substrate.

  • Co/CoAl magnetic superlattices on GaAs. De Boeck, J.; Bruynseraede, C.; Bender, H.; Van Esch, A.; Van Roy, W.; Borghs, G. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p6281 

    Focuses on a study which examined the use of CoAl as a template for cobalt (Co) epitaxy on gallium arsenide and as interlayer in a magnetic Co/CoAl multilayer. Significance of the combination of ferromagnetic thin films and semiconductor heterostructures; Magnetic properties of multilayers with...

  • Formation of thin films of CoSi2 on GaAs. Hult, Mikael; Persson, Leif; El Bouanani, Mohamed; Whitlow, Harry J.; Andersson, Margaretha; Östling, Mikael; Lundberg, Nils; Zaring, Carina; Georgsson, Kristina; Cohen, David D.; Dytlewski, Nick; Johnston, Peter N.; Walker, Scott R. // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2435 

    Presents information on a study which determined the interfacial reactions in GaAs samples with thin film overlayers of silicon and cobalt using x-ray diffraction, scanning electron microscopy and x-ray photoelectron spectroscopy. Materials and methods; Results and discussion; Conclusions.

  • Transmission electron microscopy investigation of Co thin films on GaAs(001). Mangan, M.A.; Spanos, G.; Ambrose, T.; Prinz, G.A. // Applied Physics Letters;7/19/1999, Vol. 75 Issue 3, p346 

    Makes observations on the microstructure of cobalt (Co) thin films on gallium arsenide(001) substrates by transmission electron microscopy. Characterization of the temperature equilibrium structure of Co; Diffraction patterns; Range of film thickness.

  • Amorphous phase formation by solid-state reaction between polycrystalline Co thin films and single-crystal GaAs. Shiau, F. Y.; Chang, Y. A. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1510 

    The formation of an amorphous phase between Co thin films and GaAs substrates by solid-state reaction has been investigated by transmission electron microscopy and Auger electron spectroscopy. The amorphization is ascribed to the fast diffusion of Co in GaAs. The amorphous layer, after a 300...

  • Stoner excitations in bcc Co (invited). Idzerda, Y. U.; Lind, D. M.; Papaconstantopoulos, D. A.; Prinz, G. A.; Jonker, B. T.; Krebs, J. J. // Journal of Applied Physics;11/15/1988, Vol. 64 Issue 10, p5921 

    Presents information on a study which analyzed multiple structures in the spin-polarized electron energy loss spectra for thin films of body-centered cubic (bcc) cobalt (Co) epitaxially grown on gallium arsenide (GaAs)(110). Calculation of transition density of states for excitations; Electron...

  • Study of the Co-Ge/GaAs contact system. Genut, M.; Eizenberg, M. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2146 

    Presents a study which observed the interfacial reactions between thin films of cobalt and germanium and (001)-oriented gallium arsenide substrates. Experimental details; Results of the study; Discussion of findings.

  • Ge-rich Co-Ge contacts to n-type GaAs. Koltin, E.; Eizenberg, M. // Journal of Applied Physics;5/1/1992, Vol. 71 Issue 9, p4604 

    Presents a study which investigated the interfacial reactions for the cobalt (Co)/germanium (Ge) and Ge/Co contact systems on (001)-oriented n-type gallium arsenide substrates. Values for the atomic ratio of the films; Experimental details on substrate deposition; Analysis of phase formation as...

  • Investigation of deep electronic centers in low-temperature grown GaAs using extremely thin layers. Pfeiffer, K.-F. G.; Tautz, S.; Kiesel, P.; Steen, C.; Malzer, S.; Do¨hler, G. H. // Applied Physics Letters;10/9/2000, Vol. 77 Issue 15 

    We report on an approach to investigate the deep electronic defect centers in low-temperature grown GaAs (LT-GaAs). Using an extremely thin LT-GaAs layer (comparable with the penetration depth of an electric field in bulk material) incorporated in the i layer of a p-i-n diode, we are able to...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics