TITLE

Effects of heat treatments of GaAs on the near-surface distribution of EL2 defects

AUTHOR(S)
Wada, K.; Inoue, N.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p945
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A cluster model is proposed for the midgap state EL2 in GaAs based on a defect reaction similar to that of the thermal donor formation in silicon. Anomalous depth profiles of the EL2 defects in bulk GaAs created by heat treatment have been quantitatively explained, assuming that the EL2 defect is a four point defect cluster. Possible candidates of the point defects are discussed.
ACCESSION #
9818424

 

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