Effects of heat treatments of GaAs on the near-surface distribution of EL2 defects

Wada, K.; Inoue, N.
November 1985
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p945
Academic Journal
A cluster model is proposed for the midgap state EL2 in GaAs based on a defect reaction similar to that of the thermal donor formation in silicon. Anomalous depth profiles of the EL2 defects in bulk GaAs created by heat treatment have been quantitatively explained, assuming that the EL2 defect is a four point defect cluster. Possible candidates of the point defects are discussed.


Related Articles

  • Femtosecond degenerate four-wave mixing in 500 μm undoped GaAs and 350 μm undoped InP far below band gap. Yu, Sungkyu; Kim, Dongho; Kim, D. S.; Lee, Y. H.; Cho, Y. H.; Choe, B. D.; Lee, Jong Hyun // Journal of Applied Physics;5/15/1997, Vol. 81 Issue 10, p6928 

    Rather strong third- and fifth-order four-wave mixing (FWM) signals from a 500 μm thick undoped GaAs anda 350 μm thick undoped InP in detuning ranges of 80–170 meV below the band gap are observed. The spectrally resolved (SR) FWM signals for both samples far below the band gap are...

  • Manifestation of Coulomb Gap in Two-Dimensional p-GaAs–AlGaAs Structures with Filled Upper Hubbard Band. Agrinskaya, N. V.; Kozub, V. I.; Ustinov, V. M.; Chernyaev, A. V.; Shamshur, D. V. // JETP Letters;9/25/2002, Vol. 76 Issue 6, p360 

    The transport properties of multilayer GaAs/A1GaAs structures doped modulationally with Be so as to fill, in equilibrium, the states of upper Hubbard band (A[sup +] centers) with holes were studied. For the concentration of dopants on the order of 5 × 10[sup 11] cm[sup -2], the hopping...

  • Ballistic electron emission luminescence. Appelbaum, Ian; Russell, K. J.; Narayanamurti, V.; Monsma, D. J.; Marcus, C. M.; Hanson, M. P.; Gossard, A. C.; Temkin, H.; Perry, C. H. // Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4498 

    We describe the design, fabrication, and operation of a GaAs-based heterostructure device which emits band gap luminescence from solid-state tunnel-junction ballistic injection of electrons with sub-bandgap energy. We find that, due to energy conservation requirements, a collector bias exceeding...

  • Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. 79, 3272 (2001)]. Metzger, W.K.; Wanlass, M.W.; Ellingson, R.J.; Ahrenkiel, R.K.; Carapella, J.J. // Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p4062 

    Presents a correction to the article "Auger Recombination in Low-Band-Gap n-type InGaAs" that was previously published in the periodical "Applied Physics Letters".

  • Response to ‘‘Comment on ‘Identification of oxygen-related midgap level in GaAs’ ’’ [Appl. Phys. Lett. 46, 311 (1985)]. Lagowski, J.; Lin, D.-G.; Aoyama, T.; Gatos, H. C. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p311 

    Responds to J.C. Bourgoin and D. Stievenard's comments on the authors' article about the identification of oxygen-related midgap level in gallium arsenide. Validity of the parameters; Capacitance transients of oxygen-free gallium arsenide; Magnitude of the capacitance transient changes.

  • Comment on ‘‘Identification of oxygen-related midgap level in GaAs’’ [Appl. Phys. Lett. 44, 336 (1984)]. Bourgoin, J. C.; Stievenard, D. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p311 

    Comments on J. Lagowski and colleagues' article about the identification of oxygen-related midgap level in gallium arsenide. Incorrect interpretation on the nature of the transient capacitance; Derivation of the exact transient; Component of the transient capacitance.

  • Photocurrent self-oscillations in a direct-gap GaAs-AlAs superlattice. Ohtani, Naoki; Hosoda, Makoto // Applied Physics Letters;1/20/1997, Vol. 70 Issue 3, p375 

    Investigates the photocurrent self-oscillations in megahertz regime in a direct energy gap gallium arsenide-aluminum arsenide superlattice. Appearance of photocurrent oscillations; Dependence of frequency distribution of oscillation amplitudes on the applied voltage; Connection of the existence...

  • Control of the band-gap shift in quantum-well intermixing using a germanium interlayer. Teng, J. H.; Chua, S. J.; Li, G.; Helmy, A. Saher; Marsh, J. H. // Applied Physics Letters;3/20/2000, Vol. 76 Issue 12, p1582 

    A simple technique for controlling the shift in band gap in AlGaAs/GaAs and InGaAs/GaAs quantum-well (QW) structures is reported. It involves the evaporation of a thin Ge layer and then covering it with spin-on silica followed by rapid thermal annealing. The quantum-well intermixing was...

  • Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates. Mukherjee, K.; Beaton, D. A.; Christian, T.; Jones, E. J.; Alberi, K.; Mascarenhas, A.; Bulsara, M. T.; Fitzgerald, E. A. // Journal of Applied Physics;May2013, Vol. 113 Issue 18, p183518 

    Direct-bandgap InAlP alloy has the potential to be an active material in nitride-free yellow-green and amber optoelectronics with applications in solid-state lighting, display devices, and multi-junction solar cells. We report on the growth of high-quality direct-bandgap InAlP on relaxed InGaAs...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics