Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor

Vu, D. P.; Pfister, J. C.
November 1985
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p950
Academic Journal
We describe a technique for measuring minority-carrier lifetime on a very small area of material and apply this technique to recrystallized silicon layers on an insulating substrate where the localization of the crystalline defects gives rise to small defect-free regions actually used for devices. The method uses a depletion-mode transistor in which drain-source conductance yields a signal equivalent to capacitance signal, thus allowing measurements equivalent to conventional Zerbst transient capacitance to be made in the defect-free regions.


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