Blue luminescence of a ZnSe-ZnS0.1Se0.9 strained-layer superlattice on a GaAs substrate grown by low-pressure organometallic vapor phase epitaxy

Fujita, Shigeo; Matsuda, Yoshinobu; Sasaki, Akio
November 1985
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p955
Academic Journal
The ZnSe-ZnS0.1Se0.9 strained-layer superlattice (SLS) with an average lattice parameter equal to that of GaAs has been grown on a (100)GaAs substrate at a growth temperature of 400 °C by a low-pressure organometallic vapor-phase epitaxy using dimethylzinc, H2Se, and H2S as sources. The SLS’s exhibited strong blue photoluminescence with a single emission peak, while ZnSe epitaxial layers grown directly on the GaAs substrates showed several peaks related to some defects or impurities together with excitonic emission lines at a near band edge region. Intense blue emission was also observed in ZnS0.05Se0.95 layers grown on the top of the SLS structures. Low-temperature photoluminescence has been investigated to examine the influence of the structural variation on the properties of these layers.


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