TITLE

Evidences that P diffusion in Si is assisted mainly by vacancies

AUTHOR(S)
Mathiot, D.; Pfister, J. C.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p962
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A reexamination of some experimental results, including very high concentration phosphorus diffusion with self-interstitial injection, leads to the conclusion that P diffusion is assisted mainly by vacancies. This point is also strengthened by a simple calculation showing that the dominant defect for P diffusion plays the minor role in self-diffusion.
ACCESSION #
9818416

 

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