Magnetic field dependence of hot-electron transport in GaAs

Hayes, J. R.; Levi, A. F. J.; Wiegmann, W.
November 1985
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p964
Academic Journal
We have studied the magnetic field dependence of hot-electron spectra using hot-electron spectroscopy. It is shown that application of a magnetic field normal to the injection direction has a dramatic effect on the spectra whereas a magnetic field applied parallel to the injection direction has no effect. The magnetic field is shown to increase the effective transit region width of the spectrometer enabling us to deduce a scattering rate for hot electrons that is at least four times greater than would be expected considering phonon emission alone.


Related Articles

  • Hot-electron transport in GaAs in the presence of a magnetic field. Beton, P. H.; Long, A. P.; Kelly, M. J. // Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1425 

    We describe the results of the incorporation of magnetic field effects into the Monte Carlo simulation of hot electrons traversing narrow regions of heavily doped GaAs. In addition to accounting for the experimentally observed suppression of the ballistic contribution to the hot-electron...

  • Dynamic Nuclear Polarization In GaAs : Hot Electron And Spin Injection Mechanisms. Hoch, M. J. R.; Lu, J.; Kuhns, P. L.; Moulton, W. G. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1317 

    The detailed understanding of electron-nucleus interactions and spin manipulation processes in semiconductors is of crucial importance in the development of new technology based on spin degrees of freedom. We have shown that dynamic polarization of nuclei may be induced by charge transport in...

  • Dynamics of injected electron cooling in GaAs. Hayes, J. R.; Levi, A. F. J.; Weigmann, W. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1365 

    Using the technique of hot-electron spectroscopy we have measured the change in hot-electron spectra with transit region width enabling us to obtain a dynamic picture of injected hot-electron cooling in n+ GaAs. All features in the spectra have been identified and...

  • Femtosecond hot-carrier energy relaxation in GaAs. Schoenlein, R. W.; Lin, W. Z.; Ippen, E. P.; Fujimoto, J. G. // Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1442 

    Excited carrier dynamics in GaAs and Al0.2Ga0.8As are investigated using femtosecond pump and continuum probe techniques. We observe absorption spectral hole burning arising from excited carriers generated by transitions from the split-off band as well as the heavy- and light-hole bands....

  • Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy. Prabhu, S.S.; Ralph, S.E. // Applied Physics Letters;5/5/1997, Vol. 70 Issue 18, p2419 

    Demonstrates subpicosecond electron lifetimes in low-temperature-grown gallium arsenide by infrared terahertz spectroscopy. Relationship of carrier lifetimes and excess arsenic incorporation and anneal conditions; Determination of a relative electron mobility; Attribution of observed...

  • Transverse Velocity Fluctuations Of Hot Electrons In N-type GaAs In Crossed Electric And Magnetic Fields By Monte Carlo Methods. Ciccarello, F.; Zarcone, M. // AIP Conference Proceedings;2005, Vol. 800 Issue 1, p492 

    In this work we investigate some steady-state stochastic properties of hot electron dynamics in bulk n-type GaAs in the presence of crossed, static electric and magnetic fields. To this aim, a single particle, three valleys-Monte Carlo method is adopted. In order to include the non-parabolicity...

  • Hot electron noise in n-type semiconductors in crossed electric and magnetic fields. Ciccarello, F.; Zarcone, M. // AIP Conference Proceedings;2005, Vol. 780 Issue 1, p159 

    In this work we have investigated the noise properties of hot electrons in n-type GaAs in crossed electric and magnetic fields by single-particle Monte Carlo simulations. The motion of electrons during free flights is treated classically. Nonparabolicity of valleys is taken into account by means...

  • Subpicosecond photoconductivity overshoot in gallium arsenide observed by electro-optic sampling. Meyer, Kevin; Pessot, Maurice; Mourou, Gerard; Grondin, Robert; Chamoun, Sleiman // Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2254 

    Electro-optic sampling of photoconductive transients on a subpicosecond time scale is used to study hot-carrier transport in GaAs. The results reported here are interpreted as direct time-domain observations of nonequilibrium transport on a subpicosecond time scale and they clearly show both an...

  • Minority-carrier lifetime measurements and defect-structure identification for gallium arsenide grown on sapphire by organometallic vapor phase epitaxy. Timmons, M. L.; Ahrenkiel, R. K.; Al-Jassim, M. M.; Dunlavy, D. J. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6259 

    Presents a study that measured minority-carrier lifetime in n-type gallium arsenide grown on sapphire substrate. Methodology; Analysis of the surface morphology of the samples; Examination of the initiation of the growth gallium arsenide.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics