Identification of EL2 in GaAs

von Bardeleben, H. J.; Stievenard, D.; Bourgoin, J. C.; Huber, A.
November 1985
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p970
Academic Journal
Combining electron paramagnetic resonance under optical excitation, deep level transient spectroscopy, electron irradiation, annealing, and quenching on LEC semi-insulating GaAs and lightly Si-doped material grown in the same way as the semi-insulating material, we have shown that (i) the irradiated material contains two types of defects related to the antisite AsGa, one As∇Ga, present before irradiation, identified to EL2 from its characteristic photoquenching behavior and the other As[ATOTHER]@B|[/ATOTHER] Ga, created by the irradiation, stable under photoexcitation; (ii) As∇Ga anneals partially under a 850 °C thermal treatment followed by a quench and the remaining defects are transformed into As*Ga; (iii) further annealing around 120 °C converts As[ATOTHER]@B|[/ATOTHER] Ga into As∇Ga, the process being thermally activated (0.5±0.2 eV). From these results and using observations of absorption on vibrational modes of the C-As interstitial pair in electron irradiated material, we are able to conclude that As*Ga is the isolated antisite and As∇Ga, i.e., EL2, is a complex of an As antisite and an As interstitial.


Related Articles

  • Stacking fault effects in pure and n-type doped GaAs. Schmidt, T. M.; Justo, J. F.; Fazzio, A. // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p907 

    Using ab initio total-energy calculations, we investigate the effects of stacking faults on the properties of dopants in pure and n-type doped GaAs. We find that the Si impurity segregates towards a GaAs stacking fault. A Si atom at a Ga site in the stacking fault, in either a neutral or a...

  • Editorial. Min, Mart // Estonian Journal of Engineering;Mar2010, Vol. 16 Issue 1, p3 

    An introduction to the journal is presented in which the editor discusses a paper on the technologies for gallium arsenide (GaAs) powder diode structures, a description of high-level decision diagrams to represent digital electronic systems and articles on biomedical physics and technology.

  • Rapid communication Photoemission of spinpolarized electrons from strained GaAsP. Drescher, P.; Andresen, H. G.; Aulenbacher, K.; Bermuth, J.; Dombo, T.; Fischer, H.; Euteneuer, H.; Faleev, N. N.; Galaktionov, M. S.; von Harrach, D.; Hartmann, P.; Hoffmann, J.; Jennewein, P.; Kaiser, K. H.; Köbis, S.; Kovalenkov, O. V.; Kreidel, H. J.; Langbein, J.; Mamaev, Y. A.; Nachtigall, Ch. // Applied Physics A: Materials Science & Processing;1996, Vol. 63 Issue 2, p203 

    Strained layer GaAs[sub .95]P[sub .05] photo cathodes are presented, which emit electron beams spinpolarized to a degree of P = 75% typically. Quantum yields around QE = 0.4% are observed routinely. The figure of merit P² × QE = 2.3 × 10[sup -3] is comparable to that of the best...

  • Momentum Alignment and Spin Orientation of Photoexcited Electrons in GaAs in the Transition from Two- to Three-Dimensional Structures. Akimov, I. A.; Mirlin, D. N.; Perel’, V. I.; Sapega, V. F. // Semiconductors;Jun2001, Vol. 35 Issue 6, p727 

    The effect of miniband formation in superlattices on the selection rules for optical transitions has been analyzed by studying the polarized hot electron luminescence (HEL). Two regions can be distinguished in the range of variation of miniband parameters in superlattices, each characterized by...

  • Electronic structure of GaAs2. Balasubramanian, K. // Journal of Chemical Physics;9/15/1987, Vol. 87 Issue 6, p3518 

    Complete active space MCSCF (CASSCF) followed by multireference singles + doubles configuration interaction (MRSDCI) calculations are carried out on the electronic states of GaAs2. Three electronic states, namely, 2B2, 2A1, and 2B1 are found among which the 2B2 state is the lowest state. The 2A1...

  • A simplified GaAs polarized electron source Al-Khateeb, H.M.; AI-Khateeb, H. M.; Birdsey, B.G.; Birdsey, B. G.; Bowen, T.C.; Bowen, T. C.; Green, A.S.; Green, A. S.; Johnston, M.E.; Johnston, M. E.; Gay, T.J.; Gay, T. J. // Review of Scientific Instruments;Oct99, Vol. 70 Issue 10, p3882 

    Reports on operational and construction details of a simplified gallium arsenide (GaAs) polarized electron source. Incorporation of multiple cesiators to extend source lifetime; Use of a spring-clamps GaAs crystal mounting design to provide uniform crystal heating; Discussion of matters related...

  • Universal magnetoluminescence kinetics in magnetically frozen 2D electron systems. Kukushkin, I. V.; Fal’ko, V. I.; Haug, R.; von Klitzing, K.; Eberl, K. // JETP Letters;1/25/96, Vol. 63 Issue 2, p133 

    The kinetics of recombination of electrons and acceptor-bound holes in AlGaAs–GaAs heterostructure obey a single-exponential decay in the liquid phase of 2D electrons, whereas localization gives rise to a broad spectrum of recombination rates, especially in the magnetic freeze-out regime....

  • Experimental verification of barrier height temperature dependence in GaAs planar doped barrier diodes. Van Tuyen, V.; Nadia, F.; Zhirun Hu; Rezazadeh, A.A. // Electronics Letters;2/6/2003, Vol. 39 Issue 3, p324 

    Investigates the effect of temperature variation on the barrier height of a GaAs planar doped barrier (PDB) diode. Increased barrier height with increased temperature; Verification of the theory that the PDB diode has a positive temperature coefficient.

  • Role of aperiodic surface defects on the intensity of electron diffraction spots. Bullock, D. W.; Ding, Z.; Thibado, P. M.; LaBella, V. P. // Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2586 

    A random distribution of two-dimensional gallium arsenide (GaAs) islands is found to effect the intensity of the electron diffraction pattern from the GaAs(001) surface. By utilizing the spontaneous island formation phenomenon as well as submonolayer deposition, the island coverage is...

  • Imaging charge trap distributions in GaN using environmental scanning electron microscopy. Toth, M.; Kucheyev, S. O.; Williams, J. S.; Jagadish, C.; Phillips, M. R.; Li, G. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    We present direct experimental evidence for a field assisted component in images acquired using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. Enhanced secondary electron (SE) emission was observed in GSED images of epitaxial GaN bombarded...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics