TITLE

Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy

AUTHOR(S)
Temkin, H.; Panish, M. B.; Logan, R. A.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p978
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied properties of mesa and waveguide p-i-n detectors fabricated from multiple quantum well structures grown by gas source molecular beam epitaxy. With 50 InGaAs wells, each approximately 120 Å thick, mesa detectors show quantum efficiency of up to 77% at 1.56 μm and a capacitance limited pulse response of 200 ps. The photocurrent response of waveguide structures is strongly TE polarized and enhanced at the n=1 exciton. These devices could be useful as wavelength selective, polarization sensitive detectors.
ACCESSION #
9818408

 

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