TITLE

Monolithic integration of GaAs/AlGaAs modulation-doped field-effect transistors and N-metal-oxide-semiconductor silicon circuits

AUTHOR(S)
Fischer, R.; Henderson, T.; Klem, J.; Kopp, W.; Peng, C. K.; Morkoç, H.; Detry, J.; Blackstone, S. C.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p983
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have demonstrated for the first time the compatibility of GaAs with Si N-channel metal-oxide-semiconductor (NMOS) transistors by successfully fabricating GaAs/AlGaAs modulation-doped field-effect transistors (MODFET’s) on a Si wafer containing NMOS devices. The MODFET’s with 2 μ gate length on 6 μ channels exhibited transconductances of 120 and 180 mS/mm at 300 and 77 K, respectively. The NMOS devices exhibited little if any performance degradation in going through the GaAs growth and fabrication process. These results show that the monolithic integration of GaAs devices with Si devices is possible, which may add a new dimension to the already exploding world of electronics.
ACCESSION #
9818404

 

Related Articles

  • Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide. Zhu, F.; Koveshnikov, S.; Ok, I.; Kim, H. S.; Zhang, M.; Lee, T.; Thareja, G.; Yu, L.; Lee, J. C.; Tsai, W.; Tokranov, V.; Yakimov, M.; Oktyabrsky, S. // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p043507 

    The authors have demonstrated a n-type GaAs depletion-mode metal-oxide-semiconductor field-effect Transistor with normalized transconductance gm of 266 mS/mm, peak electron mobility of 1124 cm2 V-1 s-1, and low hysteresis. The good device characteristics are attributed to the use of amorphous...

  • H plasma cleaning and a-Si passivation of GaAs for surface channel device applications. Marchiori, C.; Webb, D. J.; Rossel, C.; Richter, M.; Sousa, M.; Gerl, C.; Germann, R.; Andersson, C.; Fompeyrine, J. // Journal of Applied Physics;Dec2009, Vol. 106 Issue 11, p114112-1 

    We discuss GaAs(001) cleaning and surface passivation for metal-oxide-semiconductor capacitors and field effect transistors fabricated with HfO2 as high-κ gate oxide. An amorphous-Si passivating layer is deposited by molecular beam deposition on a 2×1 reconstructed GaAs surface cleaned...

  • Beyond SILICON.  // Computer Shopper;Oct2015, Issue 332, p110 

    The article offers information on finding alternative to use of silicon in electronics in future. Topics discussed include benefits of indium gallium arsenide (InGaAs) over silicon by technology analyst Rob Willoner, silicon switch as the fundamental need of digital electronics like...

  • Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding. Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi // Applied Physics Letters;2015, Vol. 106 Issue 8, p1 

    We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al2O3 and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET...

  • Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors. Frazzetto, A.; Giannazzo, F.; Fiorenza, P.; Raineri, V.; Roccaforte, F. // Applied Physics Letters;8/15/2011, Vol. 99 Issue 7, p072117 

    The mechanism limiting the channel mobility in metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated in Al-implanted 4H-SiC is discussed comparing different post-implantation annealings. In spite of the improved interfacial morphology in carbon capped samples during annealing,...

  • Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor. Woodward, T. K.; McGill, T. C.; Chung, H. F.; Burnham, R. D. // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1542 

    We report experimental realization of a three-terminal negative differential resistance (NDR) device. The device consists of a GaAs-AlxGa1-xAs double-barrier tunneling heterostructure in series with a recessed-gate metal-semiconductor field-effect transistor on a semi-insulating substrate. Basic...

  • Al[sub x]Ga[sub 1-x]As-GaAs metal-oxide semiconductor field effect transistors formed by lateral.... Chen, E.I.; Holonyak Jr., N. // Applied Physics Letters;5/15/1995, Vol. 66 Issue 20, p2688 

    Demonstrates a gallium arsenide-based metal-oxide semiconductor field effect transistor employing a laterally formed native oxide of aluminum arsenide. Similarities with semiconductor laser devices; Exhibition of gate leakage current; Penetration of native oxide by the gate electric field.

  • Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials. Prasher, Rakesh; Dass, Devi; Vaid, Rakesh // Journal of Nano- & Electronic Physics;2013, Vol. 5 Issue 1, p01017-1 

    In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS), drain induced barrier lowering (DIBL), on and off current, carrier injection velocity (vinj),...

  • Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors. Sun, Y.; Thompson, S. E.; Nishida, T. // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p104503 

    A detailed theoretical picture is given for the physics of strain effects in bulk semiconductors and surface Si, Ge, and III–V channel metal-oxide-semiconductor field-effect transistors. For the technologically important in-plane biaxial and longitudinal uniaxial stress, changes in energy...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics