Monolithic integration of GaAs/AlGaAs modulation-doped field-effect transistors and N-metal-oxide-semiconductor silicon circuits

Fischer, R.; Henderson, T.; Klem, J.; Kopp, W.; Peng, C. K.; Morkoç, H.; Detry, J.; Blackstone, S. C.
November 1985
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p983
Academic Journal
We have demonstrated for the first time the compatibility of GaAs with Si N-channel metal-oxide-semiconductor (NMOS) transistors by successfully fabricating GaAs/AlGaAs modulation-doped field-effect transistors (MODFET’s) on a Si wafer containing NMOS devices. The MODFET’s with 2 μ gate length on 6 μ channels exhibited transconductances of 120 and 180 mS/mm at 300 and 77 K, respectively. The NMOS devices exhibited little if any performance degradation in going through the GaAs growth and fabrication process. These results show that the monolithic integration of GaAs devices with Si devices is possible, which may add a new dimension to the already exploding world of electronics.


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