Strain-dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structures

Vasquez, R. P.; Madhukar, A.
November 1985
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p998
Academic Journal
A correlation between the nitridation condition dependent nitrogen distribution and the magnitude of the flatband voltage shift in SiOxNy/Si structures is identified and an explanation proposed in terms of a strain-dependent kinetics of formation of defects near the interface. The proposed explanation derives from, and is consistent with, the recent demonstration of the influence of the interfacial strain on the nitridation kinetics of thermally nitrided SiOxNy/Si films.


Related Articles

  • Specifics of Silicon Nitration. Bendovskii, E. B.; Guzman, I. Ya. // Glass & Ceramics;Nov/Dec2003, Vol. 60 Issue 11/12, p374 

    The sequence of formation of silicon nitride phases inside the volume of an initial silicon grain heated in a gaseous nitrogen medium is studied. Technologies for making ceramics articles based on silicon nitride are proposed.

  • Formation and bonding structure of silicon nitride by 20-keV N+ ion implantation. Hasegawa, S.; Zalm, P. C. // Journal of Applied Physics;10/1/1985, Vol. 58 Issue 7, p2539 

    Presents a study that investigated the nitridation process and the annealing effects of silicon-nitride layers using x-ray photoelectron spectroscopy and Auger electron spectroscopy. Methodology; Estimation of the nitrogen concentration in the silicon-nitride regions; Examination of the kinetic...

  • MeV proton elastic backscattering analysis of silicon nitride and oxide layers on silicon. Weilin, Jiang; Peiran, Zhu; Aihua, Dong; Shiduan, Yin // Journal of Applied Physics;9/1/1991, Vol. 70 Issue 5, p2610 

    Presents information on a study which described a method for the analysis of concentration ratios of nitrogen and silicon, and oxygen and silicon in silicon nitride and oxide layers on silicon substrate using proton elastic backscattering. Methods; Results; Discussion.

  • Structural and optical properties of silicon nitride film generated on Si substrate by low energy ion implantation. D. Dorranian; P. Azadfar; A. Sari; S. Ghorbani; A. Hojabri; M. Ghoranneviss // European Physical Journal - Applied Physics;May2008, Vol. 42 Issue 2, p103 

    In this work the surface of (4 0 0) p-type Si wafers is bombarded with 29?keV nitrogen ions at various ion beam fluency varied from 1016to 1018?ions/cm2and the results are investigated. Si3N4film with orthorhombic structure is formed on silicon surface with cubic structure while the lattice...

  • Nitrogen self-diffusion in silicon nitride thin films probed with isotope heterostructures. Schmidt, H.; Borchardt, G.; Rudolphi, M.; Baumann, H.; Bruns, M. // Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p582 

    The self-diffusion of nitrogen is measured with secondary ion mass spectrometry in isotopically enriched polycrystalline and amorphous Si314N4/Si315N4/Si314N4 isotope heterostructures which were produced by reactive magnetron sputtering. The N diffusivities of polycrystalline films in the...

  • Bonding configuration of fluorine in fluorinated silicon nitride films. Fujita, Shizuo; Toyoshima, Hideo; Sasaki, Akio // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3481 

    Discusses a study which investigated bonding configuration of constituent elements in fluorinated silicon nitride insulating films prepared by reactive plasma of SiF[sub4] (or SiF[sub2]), N[sub2] and H[sub2] gas mixture. Way in which the mixture was investigated; Result of the complemental...

  • Silicon nitride--A new breed of ceramics. Henry, Anna // Foundry Management & Technology;Sep97, Vol. 125 Issue 9, p56 

    Presents information pertaining to foundries, while focusing on silicon nitride in the ceramics industry. Temperature capacity of silicon nitride; What are some advantages of using silicon nitride; Reference to an arrangement between the Pyrotek and Kyocera companies.

  • Growth and characterization of silicon thin films employing supersonic jets of SiH4 on... Mullins, C.B.; Pacheco, K.A. // Journal of Applied Physics;12/15/1997, Vol. 82 Issue 12, p6281 

    Studies the growth and characterization of silicon thin films employing supersonic jets of SiH4 on polysilicon and Si(100). Experimental procedure used; Definition of the reaction probability; Results and discussion of the study.

  • Passivation effect of silicon nitride against copper diffusion. Miyazaki, Hiroshi; Kojima, Hisao // Journal of Applied Physics;6/15/1997, Vol. 81 Issue 12, p7746 

    Evaluates the passivation effect of plasma-enhanced chemical-vapor-deposited silicon nitride using secondary ion mass spectrometry and atomic absorption spectrometry. Detection of copper contamination; Use of copper in ultralarge scale integrated conductors; Effect of copper contamination on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics