TITLE

Strain-dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structures

AUTHOR(S)
Vasquez, R. P.; Madhukar, A.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p998
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A correlation between the nitridation condition dependent nitrogen distribution and the magnitude of the flatband voltage shift in SiOxNy/Si structures is identified and an explanation proposed in terms of a strain-dependent kinetics of formation of defects near the interface. The proposed explanation derives from, and is consistent with, the recent demonstration of the influence of the interfacial strain on the nitridation kinetics of thermally nitrided SiOxNy/Si films.
ACCESSION #
9818397

 

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